Title | Ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial Cu foil |
Author | Xu, Xiaozhi1,2; Zhang, Zhihong1,2; Dong, Jichen3; Yi, Ding3; Niu, Jingjing1; Wu, Muhong1; Lin, Li4; Yin, Rongkang5; Li, Mingqiang1; Zhou, Jingyuan4; Wang, Shaoxin1; Sun, Junliang6; Duan, Xiaojie4,5; Gao, Peng1,4,7; Jiang, Ying7,8; Wu, Xiaosong1,7; Peng, Hailin4; Ruoff, Rodney S.3,9; Liu, Zhongfan4; Yu, Dapeng1,7,10 ![]() ![]() ![]() ![]() |
Corresponding Author | Wang, Enge; Ding, Feng; Liu, Kaihui |
Publication Years | 2017-08-15
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DOI | |
Source Title | |
ISSN | 2095-9273
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EISSN | 2095-9281
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Volume | 62Issue:15Pages:1074-1080 |
Abstract | A foundation of the modern technology that uses single-crystal silicon has been the growth of highquality single-crystal Si ingots with diameters up to 12 inches or larger. For many applications of graphene, large-area high-quality (ideally of single-crystal) material will be enabling. Since the first growth on copper foil a decade ago, inch-sized single-crystal graphene has been achieved. We present here the growth, in 20 min, of a graphene film of (5 x 50) cm(2) dimension with >99% ultra-highly oriented grains. This growth was achieved by: (1) synthesis of metre-sized single-crystal Cu(1 1 1) foil as substrate; (2) epitaxial growth of graphene islands on the Cu(1 1 1) surface; (3) seamless merging of such graphene islands into a graphene film with high single crystallinity and (4) the ultrafast growth of graphene film. These achievements were realized by a temperature-gradient-driven annealing technique to produce single-crystal Cu(1 1 1) from industrial polycrystalline Cu foil and the marvellous effects of a continuous oxygen supply from an adjacent oxide. The as-synthesized graphene film, with very few misoriented grains (if any), has a mobility up to similar to 23,000 cm(2) V-1 s(-1) at 4 K and room temperature sheet resistance of similar to 230 Omega/rectangle. It is very likely that this approach can be scaled up to achieve exceptionally large and high-quality graphene films with single crystallinity, and thus realize various industrial-level applications at a low cost. (C)2017 Science China Press. Published by Elsevier B.V. and Science China Press. All rights reserved. |
Keywords | |
URL | [Source Record] |
Indexed By | |
Language | English
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Important Publications | ESI Highly Cited Papers
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SUSTech Authorship | Others
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Funding Project | National Program for Thousand Young Talents of China and the Institute for Basic Science of Korea[IBS-R019-D1]
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WOS Research Area | Science & Technology - Other Topics
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WOS Subject | Multidisciplinary Sciences
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WOS Accession No | WOS:000409432100009
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Publisher | |
EI Accession Number | 20173404075562
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EI Keywords | Copper
; Film growth
; Graphene
; Metal castings
; Metal cladding
; Oxygen supply
; Silicon wafers
; Single crystals
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ESI Classification Code | Foundry Practice:534.2
; Copper:544.1
; Semiconductor Devices and Integrated Circuits:714.2
; Chemical Products Generally:804
; Crystalline Solids:933.1
; Crystal Growth:933.1.2
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Data Source | Web of Science
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Citation statistics |
Cited Times [WOS]:385
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Document Type | Journal Article |
Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/28716 |
Department | Department of Physics |
Affiliation | 1.Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China 2.Peking Univ, Acad Adv Interdisciplinary Studies, Beijing 100871, Peoples R China 3.Inst Basic Sci, CMCM, Ulsan 689798, South Korea 4.Peking Univ, Coll Chem & Mol Engn, Ctr Nanochem, Beijing 100871, Peoples R China 5.Peking Univ, Dept Biomed Engn, Coll Engn, Beijing 100871, Peoples R China 6.Peking Univ, Coll Chem & Mol Engn, Beijing 100871, Peoples R China 7.Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China 8.Peking Univ, Int Ctr Quantum Mat, Beijing 100871, Peoples R China 9.Ulsan Natl Inst Sci & Technol, Dept Chem, Ulsan 689798, South Korea 10.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China 11.Ulsan Natl Inst Sci & Technol, Sch Mat Sci & Engn, Ulsan 689798, South Korea |
Recommended Citation GB/T 7714 |
Xu, Xiaozhi,Zhang, Zhihong,Dong, Jichen,et al. Ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial Cu foil[J]. Science Bulletin,2017,62(15):1074-1080.
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APA |
Xu, Xiaozhi.,Zhang, Zhihong.,Dong, Jichen.,Yi, Ding.,Niu, Jingjing.,...&Liu, Kaihui.(2017).Ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial Cu foil.Science Bulletin,62(15),1074-1080.
|
MLA |
Xu, Xiaozhi,et al."Ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial Cu foil".Science Bulletin 62.15(2017):1074-1080.
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