中文版 | English
Title

Ultrafast growth of single-crystal graphene assisted by a continuous oxygen supply

Author
Corresponding AuthorDing, Feng
Publication Years
2016-11
DOI
Source Title
ISSN
1748-3387
EISSN
1748-3395
Volume11Issue:11Pages:930-935
Abstract
Graphene has a range of unique physical properties(1,2) and could be of use in the development of a variety of electronic, photonic and photovoltaic devices(3-5). For most applications, large-area high-quality graphene films are required and chemical vapour deposition (CVD) synthesis of graphene on copper surfaces has been of particular interest due to its simplicity and cost effectiveness(6-15). However, the rates of growth for graphene by CVD on copper are less than 0.4 mu m s(-1), and therefore the synthesis of large, single-crystal graphene domains takes at least a few hours. Here, we show that single-crystal graphene can be grown on copper foils with a growth rate of 60 mu m s(-1). Our high growth rate is achieved by placing the copper foil above an oxide substrate with a gap of similar to 15 mu m between them. The oxide substrate provides a continuous supply of oxygen to the surface of the copper catalyst during the CVD growth, which significantly lowers the energy barrier to the decomposition of the carbon feedstock and increases the growth rate. With this approach, we are able to grow single-crystal graphene domains with a lateral size of 0.3 mm in just 5 s.
URL[Source Record]
Indexed By
SCI ; EI
Language
English
Important Publications
NI Journal Papers ; ESI Highly Cited Papers ; ESI Highly Cited Papers ; ESI Highly Cited Papers ; ESI Highly Cited Papers
SUSTech Authorship
Others
Funding Project
National Basic Research Program of China[2016YFA0300903] ; National Basic Research Program of China[2013CBA01603] ; National Basic Research Program of China[2014CB932500] ; National Basic Research Program of China[2012CB921300]
WOS Research Area
Science & Technology - Other Topics ; Materials Science
WOS Subject
Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS Accession No
WOS:000387530100011
Publisher
EI Accession Number
20193907474037
EI Keywords
Catalysts ; Chemical vapor deposition ; Copper compounds ; Cost effectiveness ; Graphene ; Oxygen supply ; Single crystals ; Substrates
ESI Classification Code
Chemical Reactions:802.2 ; Chemical Products Generally:804 ; Industrial Economics:911.2 ; Crystalline Solids:933.1
Data Source
Web of Science
Citation statistics
Cited Times [WOS]:303
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/29391
DepartmentDepartment of Physics
Affiliation
1.Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
2.Peking Univ, Acad Adv Interdisciplinary Studies, Beijing 100871, Peoples R China
3.Hong Kong Polytech Univ, Inst Text & Clothing, Hong Kong, Hong Kong, Peoples R China
4.Peking Univ, Coll Chem & Mol Engn, Ctr Nanochem, Beijing 100871, Peoples R China
5.Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China
6.Collaborat Innovat Ctr Quantum Matter, Beijing 100871, Peoples R China
7.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China
8.Peking Univ, Int Ctr Quantum Mat, Beijing 100871, Peoples R China
9.Beijing Sci & Engn Ctr Nanocarbons, Beijing 100871, Peoples R China
Recommended Citation
GB/T 7714
Xu, Xiaozhi,Zhang, Zhihong,Qiu, Lu,et al. Ultrafast growth of single-crystal graphene assisted by a continuous oxygen supply[J]. Nature Nanotechnology,2016,11(11):930-935.
APA
Xu, Xiaozhi.,Zhang, Zhihong.,Qiu, Lu.,Zhuang, Jianing.,Zhang, Liang.,...&Liu, Kaihui.(2016).Ultrafast growth of single-crystal graphene assisted by a continuous oxygen supply.Nature Nanotechnology,11(11),930-935.
MLA
Xu, Xiaozhi,et al."Ultrafast growth of single-crystal graphene assisted by a continuous oxygen supply".Nature Nanotechnology 11.11(2016):930-935.
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