中文版 | English
Title

Origin of the High Performance in GeTe-Based Thermoelectric Materials upon Bi2Te3 Doping

Author
Corresponding AuthorKanatzidis, Mercouri
Publication Years
2014-08-13
DOI
Source Title
ISSN
0002-7863
EISSN
1520-5126
Volume136Issue:32Pages:11412-11419
Abstract

As a lead-free material, GeTe has drawn growing attention in thermoelectrics, and a figure of merit (ZT) close to unity was previously obtained via traditional doping/alloying, largely through hole carrier concentration tuning. In this report, we show that a remarkably high ZT of similar to 1.9 can be achieved at 773 K in Ge0.87Pb0.13Te upon the introduction of 3 mol % Bi2Te3. Bismuth telluride promotes the solubility of PbTe in the GeTe matrix, thus leading to a significantly reduced thermal conductivity. At the same time, it enhances the thermopower by activating a much higher fraction of charge transport from the highly degenerate Sigma valence band, as evidenced by density functional theory calculations. These mechanisms are incorporated and discussed in a three-band (L + Sigma + C) model and are found to explain the experimental results well. Analysis of the detailed microstructure (including rhombohedral twin structures) in Ge0.87Pb0.13Te + 3 mol % Bi2Te3 was carried out using transmission electron microscopy and crystallographic group theory. The complex microstructure explains the reduced lattice thermal conductivity and electrical conductivity as well.

URL[Source Record]
Indexed By
SCI ; EI
Language
English
Important Publications
NI Journal Papers ; NI论文 ; ESI Highly Cited Papers ; ESI Highly Cited Papers ; ESI Highly Cited Papers ; ESI Highly Cited Papers ; ESI Highly Cited Papers ; ESI Highly Cited Papers ; ESI Highly Cited Papers ; ESI Highly Cited Papers ; ESI Highly Cited Papers ; ESI Highly Cited Papers ; ESI Highly Cited Papers ; ESI Highly Cited Papers ; ESI Highly Cited Papers ; ESI Highly Cited Papers
SUSTech Authorship
First
Funding Project
United States Israel Binational Science Foundation (BSF)[2008114]
WOS Research Area
Chemistry
WOS Subject
Chemistry, Multidisciplinary
WOS Accession No
WOS:000340442700038
Publisher
EI Accession Number
20143418092260
EI Keywords
Density Functional Theory ; Germanium Compounds ; Group Theory ; High Resolution Transmission Electron Microscopy ; Hole Concentration ; Iv-vi Semiconductors ; Lead Compounds ; Microstructure ; Tellurium Compounds ; Thermal Conductivity ; Thermoelectricity
ESI Classification Code
Thermodynamics:641.1 ; Electricity: Basic Concepts And Phenomena:701.1 ; Optical Devices And Systems:741.3 ; Algebra:921.1 ; Probability Theory:922.1 ; Materials Science:951
Data Source
Web of Science
Citation statistics
Cited Times [WOS]:284
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/30163
DepartmentDepartment of Physics
Affiliation
1.South Univ Sci & Technol China, Dept Phys, Shenzhen 518055, Peoples R China
2.Northwestern Univ, Dept Chem, Evanston, IL 60208 USA
3.Northwestern Univ, Dept Mat Sci & Engn, Evanston, IL 60208 USA
4.Univ Michigan, Dept Phys, Ann Arbor, MI 48109 USA
5.Ben Gurion Univ Negev, Dept Mat Engn, IL-84105 Beer Sheva, Israel
First Author AffilicationDepartment of Physics
First Author's First AffilicationDepartment of Physics
Recommended Citation
GB/T 7714
Wu, Di,Zhao, Li-Dong,Hao, Shiqiang,et al. Origin of the High Performance in GeTe-Based Thermoelectric Materials upon Bi2Te3 Doping[J]. Journal of the American Chemical Society,2014,136(32):11412-11419.
APA
Wu, Di.,Zhao, Li-Dong.,Hao, Shiqiang.,Jiang, Qike.,Zheng, Fengshan.,...&He, Jiaqing.(2014).Origin of the High Performance in GeTe-Based Thermoelectric Materials upon Bi2Te3 Doping.Journal of the American Chemical Society,136(32),11412-11419.
MLA
Wu, Di,et al."Origin of the High Performance in GeTe-Based Thermoelectric Materials upon Bi2Te3 Doping".Journal of the American Chemical Society 136.32(2014):11412-11419.
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