Title | A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation |
Author | |
Corresponding Author | Yu, Shimeng |
Publication Years | 2013-03-25
|
DOI | |
Source Title | |
ISSN | 0935-9648
|
EISSN | 1521-4095
|
Volume | 25Issue:12Pages:1774-1779 |
Abstract | Neuromorphic computing is an emerging computing paradigm beyond the conventional digital von Neumann computation. An oxide-based resistive switching memory is engineered to emulate synaptic devices. At the device level, the gradual resistance modulation is characterized by hundreds of identical pulses, achieving a low energy consumption of less than 1 pJ per spike. Furthermore, a stochastic compact model is developed to quantify the device switching dynamics and variation. At system level, the performance of an artificial visual system on the image orientation or edge detection with 16 348 oxide-based synaptic devices is simulated, successfully demonstrating a key feature of neuromorphic computing: tolerance to device variation. |
Keywords | |
URL | [Source Record] |
Indexed By | |
Language | English
|
Important Publications | NI Journal Papers
; NI论文
; ESI Highly Cited Papers
; ESI Highly Cited Papers
; ESI Highly Cited Papers
; ESI Highly Cited Papers
; ESI Highly Cited Papers
; ESI Highly Cited Papers
; ESI Highly Cited Papers
; ESI Highly Cited Papers
|
SUSTech Authorship | Others
|
Funding Project | 973 Program[2011CBA00602]
|
WOS Research Area | Chemistry
; Science & Technology - Other Topics
; Materials Science
; Physics
|
WOS Subject | Chemistry, Multidisciplinary
; Chemistry, Physical
; Nanoscience & Nanotechnology
; Materials Science, Multidisciplinary
; Physics, Applied
; Physics, Condensed Matter
|
WOS Accession No | WOS:000316322600018
|
Publisher | |
EI Accession Number | 20131316144614
|
EI Keywords | Edge Detection
; Energy Utilization
; Random Access Storage
; Stochastic Systems
|
ESI Classification Code | Energy Utilization:525.3
; Data Storage, Equipment And Techniques:722.1
; Probability Theory:922.1
; Systems Science:961
|
ESI Research Field | MATERIALS SCIENCE
|
Data Source | Web of Science
|
Citation statistics |
Cited Times [WOS]:403
|
Document Type | Journal Article |
Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/30368 |
Department | SUSTech Institute of Microelectronics |
Affiliation | 1.Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA 2.Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA 3.Peking Univ, Inst Microelect, Beijing 100871, Peoples R China 4.South Univ Sci & Technol China, Shenzhen 518055, Peoples R China 5.ASTAR, Inst Microelect, Singapore 117685, Singapore |
Recommended Citation GB/T 7714 |
Yu, Shimeng,Gao, Bin,Fang, Zheng,et al. A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation[J]. ADVANCED MATERIALS,2013,25(12):1774-1779.
|
APA |
Yu, Shimeng,Gao, Bin,Fang, Zheng,Yu, Hongyu,Kang, Jinfeng,&Wong, H. -S. Philip.(2013).A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation.ADVANCED MATERIALS,25(12),1774-1779.
|
MLA |
Yu, Shimeng,et al."A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation".ADVANCED MATERIALS 25.12(2013):1774-1779.
|
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File Name/Size | DocType | Version | Access | License | ||
adma.201203680.pdf(1436KB) | Restricted Access | -- |
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