中文版 | English
Title

A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation

Author
Corresponding AuthorYu, Shimeng
Publication Years
2013-03-25
DOI
Source Title
ISSN
0935-9648
EISSN
1521-4095
Volume25Issue:12Pages:1774-1779
Abstract

Neuromorphic computing is an emerging computing paradigm beyond the conventional digital von Neumann computation. An oxide-based resistive switching memory is engineered to emulate synaptic devices. At the device level, the gradual resistance modulation is characterized by hundreds of identical pulses, achieving a low energy consumption of less than 1 pJ per spike. Furthermore, a stochastic compact model is developed to quantify the device switching dynamics and variation. At system level, the performance of an artificial visual system on the image orientation or edge detection with 16 348 oxide-based synaptic devices is simulated, successfully demonstrating a key feature of neuromorphic computing: tolerance to device variation.

Keywords
URL[Source Record]
Indexed By
SCI ; EI
Language
English
Important Publications
NI Journal Papers ; NI论文 ; ESI Highly Cited Papers ; ESI Highly Cited Papers ; ESI Highly Cited Papers ; ESI Highly Cited Papers ; ESI Highly Cited Papers ; ESI Highly Cited Papers ; ESI Highly Cited Papers ; ESI Highly Cited Papers
SUSTech Authorship
Others
Funding Project
973 Program[2011CBA00602]
WOS Research Area
Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS Subject
Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS Accession No
WOS:000316322600018
Publisher
EI Accession Number
20131316144614
EI Keywords
Edge Detection ; Energy Utilization ; Random Access Storage ; Stochastic Systems
ESI Classification Code
Energy Utilization:525.3 ; Data Storage, Equipment And Techniques:722.1 ; Probability Theory:922.1 ; Systems Science:961
ESI Research Field
MATERIALS SCIENCE
Data Source
Web of Science
Citation statistics
Cited Times [WOS]:403
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/30368
DepartmentSUSTech Institute of Microelectronics
Affiliation
1.Stanford Univ, Dept Elect Engn, Stanford, CA 94305 USA
2.Stanford Univ, Ctr Integrated Syst, Stanford, CA 94305 USA
3.Peking Univ, Inst Microelect, Beijing 100871, Peoples R China
4.South Univ Sci & Technol China, Shenzhen 518055, Peoples R China
5.ASTAR, Inst Microelect, Singapore 117685, Singapore
Recommended Citation
GB/T 7714
Yu, Shimeng,Gao, Bin,Fang, Zheng,et al. A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation[J]. ADVANCED MATERIALS,2013,25(12):1774-1779.
APA
Yu, Shimeng,Gao, Bin,Fang, Zheng,Yu, Hongyu,Kang, Jinfeng,&Wong, H. -S. Philip.(2013).A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation.ADVANCED MATERIALS,25(12),1774-1779.
MLA
Yu, Shimeng,et al."A Low Energy Oxide-Based Electronic Synaptic Device for Neuromorphic Visual Systems with Tolerance to Device Variation".ADVANCED MATERIALS 25.12(2013):1774-1779.
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