| Title | Indium oxide, tin oxide and indium tin oxide nanostructure growth by vapor deposition |
| Author | |
| Corresponding Author | Djurisic, A. B. |
| Publication Years | 2012-05
|
| DOI | |
| Source Title | |
| ISSN | 1567-1739
|
| EISSN | 1878-1675
|
| Volume | 12Issue:3Pages:697-706 |
| Abstract | Indium oxide, tin oxide and indium tin oxide nanowires have been grown by vapor deposition on Si and quartz substrates. Under the growth conditions used, pure SiOx nanowires, a mixture of SiOx and indium oxide, tin oxide or indium tin oxide nanostructures, or pure indium oxide, tin oxide or indium tin oxide nanostructures could be obtained at different substrate temperatures. The growth mechanism of the obtained nanostructures at different substrate temperatures is discussed. Optical and electrical properties of the deposited pure indium oxide, tin oxide or indium tin oxide nanostructures have been measured, and low sheet resistances on quartz substrates have been obtained for indium oxide and indium tin oxide nanostructures. (C) 2011 Elsevier B. V. All rights reserved. |
| Keywords | |
| URL | [Source Record] |
| Indexed By | |
| Language | English
|
| SUSTech Authorship | Others
|
| Funding Project | RGC GRF[HKU 701910]
|
| WOS Research Area | Materials Science
; Physics
|
| WOS Subject | Materials Science, Multidisciplinary
; Physics, Applied
|
| WOS Accession No | WOS:000300715000017
|
| Publisher | |
| EI Accession Number | 20120914816621
|
| EI Keywords | Metals
; Nanowires
; Quartz
; Substrates
; Tin oxides
; Vapor deposition
|
| ESI Classification Code | Minerals:482.2
; Nanotechnology:761
; Inorganic Compounds:804.2
; Solid State Physics:933
|
| ESI Research Field | PHYSICS
|
| Data Source | Web of Science
|
| Citation statistics |
Cited Times [WOS]:9
|
| Document Type | Journal Article |
| Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/30429 |
| Department | Department of Physics |
| Affiliation | 1.Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China 2.S Univ Sci & Technol China, Nanostruct Inst Energy & Environm Res, Div Phys Sci, Shenzhen, Peoples R China 3.Univ Hong Kong, Electron Microscopy Unit, Hong Kong, Hong Kong, Peoples R China 4.Univ Hong Kong, Dept Chem, Hong Kong, Hong Kong, Peoples R China |
| Recommended Citation GB/T 7714 |
Fung, M. K.,Wong, K. K.,Chen, X. Y.,et al. Indium oxide, tin oxide and indium tin oxide nanostructure growth by vapor deposition[J]. CURRENT APPLIED PHYSICS,2012,12(3):697-706.
|
| APA |
Fung, M. K..,Wong, K. K..,Chen, X. Y..,Chan, Y. F..,Ng, A. M. C..,...&Chan, W. K..(2012).Indium oxide, tin oxide and indium tin oxide nanostructure growth by vapor deposition.CURRENT APPLIED PHYSICS,12(3),697-706.
|
| MLA |
Fung, M. K.,et al."Indium oxide, tin oxide and indium tin oxide nanostructure growth by vapor deposition".CURRENT APPLIED PHYSICS 12.3(2012):697-706.
|
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Fung-2012-Indium oxi（3988KB） | Restricted Access | -- | ||||
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