ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias

Chen, Xinyi1; Ng, Alan Man Ching1,2; Fang, Fang1; Ng, Yip Hang1; Djurisic, Aleksandra B.1; Tam, Hoi Lam3; Cheah, Kok Wai3; Gwo, Shangjr4; Chan, Wai Kin5; Fong, Patrick Wai Keung6; Lui, Hsian Fei6; Surya, Charles6

2011-11

10.1063/1.3653835

JOURNAL OF APPLIED PHYSICS   Impact Factor & Quartile

0021-8979

ZnO nanorods have been prepared by electrodeposition under identical conditions on various p-GaN-based thin film structures. The devices exhibited lighting up under both forward and reverse biases, but the turn-on voltage and the emission color were strongly dependent on the p-GaN-based structure used. The origin of different luminescence peaks under forward and reverse bias has been studied by comparing the devices with and without ZnO and by photoluminescence and cathodoluminescence spectroscopy. We found that both yellow-orange emission under reverse bias and violet emission under forward bias, which are commonly attributed to ZnO, actually originate from the p-GaN substrate and/or surface/interface defects. While the absolute brightness of devices without InGaN multiple quantum wells was low, high brightness with luminance exceeding 10 000 cd/m(2) and tunable emission (from orange at 2.1V to blue at 2.7 V, with nearly white emission with Commission internationale de l'eclairage (CIE) coordinates (0.30, 0.31) achieved at 2.5V) was obtained for different devices containing InGaN multiple quantum wells. (C) 2011 American Institute of Physics. [doi:10.1063/1.3653835]

SCI ; EI

English

Others

Innovation & Technology Fund[ITS/129/08]

Physics

Physics, Applied

WOS:000297062100123

AMER INST PHYSICS

20114714540667

Citrus fruits ; Gallium nitride ; II-VI semiconductors ; III-V semiconductors ; Indium alloys ; Light emitting diodes ; Luminance ; Nanorods ; Semiconductor alloys ; Zinc oxide

Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Semiconductor Devices and Integrated Circuits:714.2 ; Nanotechnology:761 ; Inorganic Compounds:804.2 ; Agricultural Products:821.4 ; Solid State Physics:933

PHYSICS

Web of Science

1.Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China
2.S Univ Sci & Technol China, Div Phys Sci, Nanostruct Inst Energy & Environm Res, Shenzhen, Peoples R China
3.Hong Kong Baptist Univ, Dept Phys, Kowloon Tong, Hong Kong, Peoples R China
4.Natl Tsing Hua Univ, Dept Phys, Hsinchu 30013, Taiwan
5.Univ Hong Kong, Dept Chem, Hong Kong, Hong Kong, Peoples R China
6.Hong Kong Polytech Univ, Dept Elect & Informat Engn, Kowloon, Hong Kong, Peoples R China

Chen, Xinyi,Ng, Alan Man Ching,Fang, Fang,et al. ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias[J]. JOURNAL OF APPLIED PHYSICS,2011,110(9).

Chen, Xinyi.,Ng, Alan Man Ching.,Fang, Fang.,Ng, Yip Hang.,Djurisic, Aleksandra B..,...&Surya, Charles.(2011).ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias.JOURNAL OF APPLIED PHYSICS,110(9).

Chen, Xinyi,et al."ZnO nanorod/GaN light-emitting diodes: The origin of yellow and violet emission bands under reverse and forward bias".JOURNAL OF APPLIED PHYSICS 110.9(2011).