基于硅基CMOS的高分辨率高刷新率Micro-LED驱动电路设计

现代人类的生活中，处处都有显示设备的应用，各种显示技术层出不穷，在各个应用领域百花齐放。被视为未来显示关键技术的Micro-LED技术正在快速发展。相比于当前常用的LCoS、OLED等技术，Micro-LED具有自主发光，快速相应，对比度高、寿命更长的优势。为配合高性能的Micro-LED进行显示，设计相应的专用Micro-LED的驱动电路显得尤为重要。当前国内对专用于Micro-LED驱动电路的研究仍处于起步阶段，进行驱动电路的深入研究与设计能够促进我国的Micro-LED显示的更进一步发展，甚至在国内外占领技术高地，因此具有重要的价值。

本文基于Micro-LED的显示特点，分析了Micro-LED几种驱动方式优缺点，同时针对传统像素驱动单元工作的优缺点，设计了新的专用于Micro-LED显示驱动的像素驱动单元电路。为提高芯片的集成度，我们还同时完成了像素驱动单元阵列的外围扫描电路的设计并于之集成设计。考虑到高分辨率、高刷新率的应用场景，我们将高速LVDS信号的接收电路加入到了设计中，完成了高速信号接收电路、外围扫描电路以及像素驱动单元阵列的集成设计。

本文设计利用SMIC 0.18μm 5V的硅基CMOS工艺进行设计，电路的设计与仿真验证基于Linux系统下的Cadence Virtuoso软件进行。为实现较为完整的设计，本设计完成了从电路设计、前仿真、版图设计、DRC、LVS到后仿真的完整的电路设计流程，最终的仿真结果表明，本设计能够实现3000PPI、1920×1080分辨率、120Hz刷新率和5bit灰度级的Micro-LED显示驱动。

[1] Jiang HX, Jin SX, Li J et al . III-nitride blue microdisplays[J]. Applied Physics Letters, 2001, 78(9):1303-1305.

[2] JEON CW, CHOI HW, GU ER et al. High-density matrix-addressable AlInGaN-Based 368-nm microarray light-emitting diodes[J]. IEEE Photonics Technology Letters, 2004, 16(11):2421-2423.

[3] FAN ZY, LIN JT, JIANG HX. III-nitride micro-emitter arrays: development and applications[J]. Journal of Physics D-Applied Physics, 2008, 41(9).

[4] LIU ZJ, CHONG WC, WONG KM et al. 360 PPI Flip-Chip Mounted Active Matrix Addressable Light Emitting Diode on Silicon (LEDoS) Micro-Displays[J]. Journal of Display Technology, 2013, 9(8):678-682.

[5] LIU ZJ, CHONG WC, WONG KM et al. A Novel BLU-Free Full-Color LED Projector Using LED on Silicon Micro-Displays[J]. IEEE Photonics Technology Letters, 2013, 25(23):2267-2270.

[6] CHONG WC, CHO WK, LIU ZJ. 1700 pixels per inch (PPI) Passive-Matrix Micro-LED Display Powered by ASIC[C]. //IEEE Compound Semiconductor Integrated Circuits Symposium, IEEE, 2014.

[7] ZHANG K, PENG D, LAU KM et al. Fully-integrated active matrix programmable UV and blue micro-LED display system-on-panel (SoP)[J]. Journal of The Society for Information Display, 2017, 25(4):240-248.

[8] QI LH, ZHANG X, CHONG WC et al. 848 ppi high-brightness active-matrix micro-LED micro-display using GaN-on-Si epi-wafers towards mass production[J]. Optics Express, 2021, 29(7):10580-10591.

[9] LI P, ZHANG X, CHONG WC et al. Monolithic Thin Film Red LED Active-Matrix Micro-Display by Flip-Chip Technology[J]. IEEE Photonics Technology Letters, 2021, 33(12):603-606.

[10] 莫晓帆，徐尉宗，陆海，等. Fabrication and Characterization of a GaN-Based 320×256 Micro-LED Array[J].Chinese Physics Letters,2017,34(11):102-105.

[11] ZHAO B, XIAO JC, LIU QS et al. A novel compensation pixel circuit for high bits of AM mini/micro-LED based on PWM method[C]. //Energy Reports, ICPE, 2022.

[12] SEONG J, JANG J, LEE J et al. CMOS Backplane Pixel Circuit With Leakage and Voltage Drop Compensation for an Micro-LED Display Achieving 5000 PPI or Higher[J]. IEEE ACCESS, 2020, 8:49467-49476.

[13] HUANG YG, HSIANG EL, DENG MY et al. Mini-LED, Micro-LED and OLED displays: present status and future perspectives[J]. Light-Science & Applications, 2020, 9(1).

[14] ZHOU XJ, TIAN PF, SHER CW et al. Growth, transfer printing and colour conversion techniques towards full-colour micro-LED display[J]. Progress in Quantum Electronics, 2020, 71.

[15] PARBROOK PJ, CORBETT B, HAN J et al. Micro-Light Emitting Diode: From Chips to Applications[J]. Laser & Photonics Reviews, 2021, 15(5).

[16] WU YF, MA JS, SU P. Full-Color Realization of Micro-LED Displays[J]. Nanomaterials, 2021, 10(12).

[17] SEAUVE Y, VIGIER M, PILLOIX T et al. Fast GaN μLED Pixel for Visible Light[C]. //IEEE International New Circuits and Systems Conference, IEEE, 2021.

[18] CHUNG KC, LEE JJ, HUANG JR et al. A Dynamic Compensated and 95% High-Efficiency Supply Buffer in RGB Virtual Pixel MicroLED Display for Reducing Ghosting by 73% and Achieving Four Times Screen Resolution[J]. IEEE Transactions on Power Electronics, 2021, 36(7):8291-8299.

[19] AHN HA, KWON OK. A Driving and Compensation Method for AMLED Displays Using Adaptive Reference Generator for High Luminance Uniformity[J]. IEEE Transactions on Circuits and Systems II-Express Briefs, 2020, 67(10):1725-1729.

[20][18] AHN HA, HONG SK, KWON OK. An Active Matrix Micro-Pixelated LED Display Driver for High Luminance Uniformity Using Resistance Mismatch Compensation Method[J]. IEEE Transactions on Circuits and Systems II-Express Briefs, 2018, 65(6):724-728.

[21] 翁梦婷. OLED显示驱动控制电路的设计[D].浙江：浙江大学,2016.

[22] 李鹏飞,徐恩波,淡美俊.近代显示技术综述[J].电子制作,2018(14):77-78.

[23] 秦昌兵,陈啟宏,徐亭亭,张白雪,杨建兵.一种用于硅基OLED驱动芯片的PWM电路设计[J].光电子技术,2020,40(01):44-47+51.

[24] 王曼媛. 有源OLED驱动控制电路的研究与设计[D].大连：大连理工大学,2013.

[25] 赖良德. 硅基OLED微显示器关键电路研究[D].江苏：东南大学,2019.

[26] 邰建鹏,郭伟玲.Micro LED显示技术研究进展[J].照明工程学报,2019,30(01):18-25.

[27] 蒋府龙,许非凡,刘召军,刘斌,郑有炓.氮化镓基Micro-LED显示技术研究进展[J].人工晶体学报,2020,49(11):2013-2023.

[28] 关宇恒. 高速CMOS LVDS收发器IP核设计[D].西安：西安电子科技大学,2014.

[29] 赵璟. LVDS四通道CMOS差分线接收器的设计[D]. 西安：西安电子科技大学,2009.

[30] Prasad SS, Mandal P. A CMOS Beta Multiplier Voltage Reference with improved temperature performance and silicon tunability[C]. //17Th international Conference on VLSI Design, Proceedings, IEEE Computer Society, 2004.

[31] LIU S, BAKER RJ. Process and temperature performance of a CMOS beta-multiplier voltage reference[C]. //1998 Midwest Symposium on Circuits and Systems, Proceedings, IEEE, 1999.

[32] ZHANG X, LI PA, ZOU XB et al. Active Matrix Monolithic LED Micro-Display Using GaN-on-Si Epilayers[J]. IEEE Photonics Technology Letters, 2019, 31(11):865-868.

[33] LIOU JC, LIN WD. Micro-device array LED processes on CMOS/MEMS substrate[C]. //International Conference on Nano-Micro Engineered and Molecular Systems NEMS, IEEE, 2018.

[34] WU TZ, SHER CW, LIN Y et al. Mini-LED and Micro-LED: Promising Candidates for the Next Generation Display Technology[J]. Applied Sciences-Basel, 2018, 8(9).

[35] DING K, Avrutin V, Izyumskaya N et al. Micro-LEDs, a Manufacturability Perspective[J]. Applied Sciences-Basel, 2019, 9(6).

[36] YU J, TAO T, LIU B et al. Investigations of Sidewall Passivation Technology on the Optical Performance for Smaller Size GaN-Based Micro-LEDs[J]. Crystals, 2021, 11(4).

[37] 张慧熙,孙亚萍,王玉槐.基于亚阈值技术的AM-OLED驱动电路研究[J].杭州师范大学学报(自然科学版),2011,10(04):354-358.

[38] 范佳敏. 低功耗高性能LCD驱动电路设计[D].苏州：苏州大学,2020.DOI:10.27351/d.cnki.gszhu.2020.000845.

[39] YOU HL, CHEN Q, LAN JC et al. Research on CMOS inverter latch-up triggered by nMOS channel capacitance under HPM interference[C]. //2012 IEEE 11Th International Conference on Solid-State and Integrated Circuit Technology (ICSICT-2012), IEEE, 2012.

[40] 藏范军. CMOS图像传感器高速LVDS收发器IP核设计[D].吉林：吉林大学,2018.

[41] 张旭光. 高速LVDS接口电路关键技术研究[D].长沙：国防科学技术大学,2010.

[42] 肖海鹏. 2.5Gbps高速LVDS收发器的设计与实现[D].长沙：国防科学技术大学,2009.

[43] 冉峰,柳玉迪,季渊,黄海浪,黄舒平.平板显示分形扫描的伽马校正[J].液晶与显示,2012,27(04):472-475.

[44] 冉峰,薛盛凯,季渊.硅基AM-OLED高清微显示器像素驱动电路的研究[J].微计算机信息,2012,28(10):12-13+16.

[45] 冉峰,唐敏,季渊.基于分形扫描的高灰度平板显示的硬件实现[J].微计算机信息,2012,28(09):19-20+26.

[46] 冉峰,储楚,季渊,王勇,邹荣.针对OLED衰退补偿的电流PWM像素驱动电路研究[J].液晶与显示,2013,28(04):534-538.

[47] 季渊,王成,冉峰,李天,刘万林.一种支持OLED亮度补偿的电流型PWM像素驱动电路[J].液晶与显示,2016,31(06):563-568.

[48] 季渊,褚勇男,冉峰,穆廷洲,满丽萍.硅基OLED微显示的数模融合驱动电路设计[J].液晶与显示,2017,32(12):973-980.

[49] 满丽萍,季渊,褚勇男,冉峰,黄舒平.高清硅基微显示数模融合扫描策略[J].激光与光电子学进展,2018,55(01):368-373.

[50] 张勇文. AMOLED驱动技术研究[D].成都：电子科技大学,2013.