Capacitance-voltage characteristics of perovskite light-emitting diodes: Modeling and implementing on the analysis of carrier behaviors

Xiao, Xiangtian1,2,3; Ye, Taikang1; Sun, Jiayun1,2,3; Qu, Xiangwei1,3; Ren, Zhenwei2; Wu, Dan4; Ding, Shihao1,3; Sun, Xiao Wei1,3; Choy, Wallace C. H.2; Wang, Kai1,3

2022-06-13

10.1063/5.0088231

APPLIED PHYSICS LETTERS   Impact Factor & Quartile

0003-6951

1077-3118

Analyzing and optimizing carrier behaviors are essential to achieve high electroluminescence performance in perovskite light-emitting diodes (PeLEDs). In this work, a capacitance-voltage (C-V) model for PeLEDs is established to describe carrier behaviors. Four distinct regions in this typical C-V model, including a neutrality region, a barrier region, a carrier diffusion region, and a carrier recombination region, were analyzed. Importantly, the C-V model is implemented to guide the electroluminescence (EL) performance improvement in PeLEDs. By studying the measured C-V characteristics of a typical PeLED, issues of a high hole injection barrier and insufficient recombination are revealed. To address them, one MoO3 interface layer with deep conduction band minimum is designed between a hole transport layer and a hole injection layer to enhance the hole injection. The C-V characteristics for the optimized PeLED confirm the reduced injection barrier and strengthened recombination rate. The optimized PeLED shows an improved external quantum efficiency from 8.34% to 15.82%. The C-V model helps us to quantitatively understand the essential carrier behaviors in PeLEDs and can serve as an efficient method to improve the EL performance of PeLEDs. Published under an exclusive license by AIP Publishing.

SCI ; EI

English

NI Journal Papers

First ; Corresponding

National Key Research and Development Program[2019YFB1704600] ; National Natural Science Foundation of China[62122034,61875082,61905107] ; Key-Area Research and Development Program of Guangdong Province[2019B010924001] ; Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting[2017KSYS007] ; Guangdong-Hong Kong-Macao Joint Laboratory[2019B121205001] ; Shenzhen Innovation Project[JCYJ20190809152411655] ; High Level University Fund of Guangdong Province[G02236004] ; General Research Fund[17200518,17201819,17211220] ; Hong Kong Special Administrative Region, China[C7035-20G]

Physics

Physics, Applied

WOS:000810506200001

AIP Publishing

20222512249551

Charge injection ; Electroluminescence ; Light ; Molybdenum oxide ; Organic light emitting diodes (OLED) ; Perovskite

Minerals:482.2 ; Electricity: Basic Concepts and Phenomena:701.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light, Optics and Optical Devices:741 ; Light/Optics:741.1 ; Chemical Products Generally:804

PHYSICS

Web of Science

1.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Guangdong Hong Kong Macao Joint Lab Photon Thermal, Shenzhen 518055, Peoples R China
2.Univ Hong Kong, Dept Elect & Elect Engn, Hong Kong, Peoples R China
3.Southern Univ Sci & Technol, Key Lab Energy Convers & Storage Technol, Minist Educ, Shenzhen 518055, Peoples R China
4.Shenzhen Technol Univ, Coll New Mat & New Energies, Shenzhen 518118, Peoples R China

Xiao, Xiangtian,Ye, Taikang,Sun, Jiayun,et al. Capacitance-voltage characteristics of perovskite light-emitting diodes: Modeling and implementing on the analysis of carrier behaviors[J]. APPLIED PHYSICS LETTERS,2022,120(24).

Xiao, Xiangtian.,Ye, Taikang.,Sun, Jiayun.,Qu, Xiangwei.,Ren, Zhenwei.,...&Wang, Kai.(2022).Capacitance-voltage characteristics of perovskite light-emitting diodes: Modeling and implementing on the analysis of carrier behaviors.APPLIED PHYSICS LETTERS,120(24).

Xiao, Xiangtian,et al."Capacitance-voltage characteristics of perovskite light-emitting diodes: Modeling and implementing on the analysis of carrier behaviors".APPLIED PHYSICS LETTERS 120.24(2022).