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Title

Optical-Beam-Induced Current in InAs/InP Nanowires for Hot-Carrier Photovoltaics

Author
Corresponding AuthorFast,Jonatan; Mikkelsen,Anders
Publication Years
2022
DOI
Source Title
ISSN
2574-0962
EISSN
2574-0962
Volume5Issue:6Pages:7728-7734
Abstract
Using the excess energy of charge carriers excited above the band edge (hot carriers) could pave the way for optoelectronic devices, such as photovoltaics exceeding the Shockley-Queisser limit or ultrafast photodetectors. Semiconducting nanowires show promise as a platform for hot-carrier extraction. Proof of principle photovoltaic devices have already been realized based on InAs nanowires, using epitaxially defined InP segments as energy filters that selectively transmit hot electrons. However, it is not yet fully understood how charge-carrier separation, relaxation, and recombination depend on device design and on the location of optical excitation. Here, we introduce the use of an optical-beam-induced current (OBIC) characterization method, employing a laser beam focused close to the diffraction limit and a high precision piezo stage, to study the optoelectric performance of the nanowire device as a function of the position of excitation. The photocurrent response agrees well with modeling based on hot-electron extraction across the InP segment via diffusion. We demonstrate that the device is capable of producing power and estimate the spatial region within which significant hot-electron extraction can take place to be on the order of 300 nm away from the barrier. When comparing to other experiments on similar nanowires, we find good qualitative agreement, confirming the interpretation of the device function, while the extracted diffusion length of hot electrons varies. Careful control of the excitation and device parameters will be important to reach the potentially high device performance theoretically available in these systems.
Keywords
URL[Source Record]
Indexed By
SCI ; EI
Language
English
SUSTech Authorship
Others
Funding Project
Knut and Alice Wallenberg Foundation[2016-0089] ; Swedish Research Council["2014-04580","2020-04201"] ; European Union[101046790]
WOS Research Area
Chemistry ; Energy & Fuels ; Materials Science
WOS Subject
Chemistry, Physical ; Energy & Fuels ; Materials Science, Multidisciplinary
WOS Accession No
WOS:000820329800001
Publisher
EI Accession Number
20222512247196
EI Keywords
Electrons ; Extraction ; Hot electrons ; Indium arsenide ; Indium phosphide ; Laser beams ; Laser excitation ; Optoelectronic devices
ESI Classification Code
Electricity: Basic Concepts and Phenomena:701.1 ; Semiconducting Materials:712.1 ; Optical Devices and Systems:741.3 ; Laser Beam Interactions:744.8 ; Laser Applications:744.9 ; Physical Chemistry:801.4 ; Chemical Operations:802.3 ; Inorganic Compounds:804.2
Scopus EID
2-s2.0-85132009955
Data Source
Scopus
Citation statistics
Cited Times [WOS]:2
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/352514
DepartmentDepartment of Electrical and Electronic Engineering
Affiliation
1.NanoLund and Division of Solid State Physics,Lund University,Lund,Box 118,22100,Sweden
2.NanoLund and Division of Synchrotron Radiation Research,Lund University,Lund,Box 118,22100,Sweden
3.Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,Guangdong,518055,China
Recommended Citation
GB/T 7714
Fast,Jonatan,Liu,Yen Po,Chen,Yang,et al. Optical-Beam-Induced Current in InAs/InP Nanowires for Hot-Carrier Photovoltaics[J]. ACS Applied Energy Materials,2022,5(6):7728-7734.
APA
Fast,Jonatan.,Liu,Yen Po.,Chen,Yang.,Samuelson,Lars.,Burke,Adam M..,...&Mikkelsen,Anders.(2022).Optical-Beam-Induced Current in InAs/InP Nanowires for Hot-Carrier Photovoltaics.ACS Applied Energy Materials,5(6),7728-7734.
MLA
Fast,Jonatan,et al."Optical-Beam-Induced Current in InAs/InP Nanowires for Hot-Carrier Photovoltaics".ACS Applied Energy Materials 5.6(2022):7728-7734.
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