中文版 | English
Title

A vertical CsPbBr3/ZnO heterojunction for photo-sensing lights from UV to green band

Author
Corresponding AuthorSu, Longxing; Zhu, Yuan
Publication Years
2022-06-20
DOI
Source Title
ISSN
1094-4087
Volume30Issue:13Pages:23330-23340
Abstract
In this work, we have reported a vertical CsPbBr3/ZnO heterojunction photodetector for photo-sensing lights from UV to visible band. The ZnO thin film is deposited on the c-sapphire substrate through a molecular beam epitaxy (MBE) technique, and then the CsPbBr3 thin film is synthesized on the as-prepared ZnO film layer by using a solution processing method. The as-prepared CsPbBr3/ZnO heterostructure presents type-II energy band structure induced by the energy band offset effect, which can promote the separation and extraction efficiencies of the photo-generated electron-hole pairs. Compared with the CsPbBr3 based metal-semiconductor-metal (MSM) structure photodetector, the heterojunction photodetector presents higher responsivity and detectivity of 630 mu A/W and 7 x 10(9) Jones. While compared with the ZnO based MSM structure photodetector, the heterojunction device reveals much faster response speeds of 61 mu s (rise time) and 1.4 ms (decay time). These findings demonstrate that the CsPbBr3/ZnO heterojunction photodetector is promising for constructing next generation perovskite based optoelectronic devices. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
URL[Source Record]
Indexed By
SCI ; EI
Language
English
SUSTech Authorship
First ; Corresponding
Funding Project
National Natural Science Foundation of China[52172149,61705043,51872132,52122607]
WOS Research Area
Optics
WOS Subject
Optics
WOS Accession No
WOS:000813479600086
Publisher
EI Accession Number
20222512247459
EI Keywords
Band structure ; Bromine compounds ; Film preparation ; Heterojunctions ; II-VI semiconductors ; Lead compounds ; Metallic films ; Molecular beam epitaxy ; Perovskite ; Photodetectors ; Photons ; Sapphire ; Thin films ; Wide band gap semiconductors
ESI Classification Code
Minerals:482.2 ; Gems:482.2.1 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Inorganic Compounds:804.2 ; Atomic and Molecular Physics:931.3 ; Solid State Physics:933 ; Crystal Growth:933.1.2
ESI Research Field
PHYSICS
Data Source
Web of Science
Citation statistics
Cited Times [WOS]:3
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/353378
DepartmentSUSTech Institute of Microelectronics
Affiliation
1.Southern Univ Sci & Technol, Sch Microelect, Shenzhen 518055, Peoples R China
2.Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China
3.Southern Univ Sci & Technol, Engn Res Ctr Integrated Circuits Next Generat Com, Minist Educ, Shenzhen 518055, Peoples R China
First Author AffilicationSUSTech Institute of Microelectronics
Corresponding Author AffilicationSUSTech Institute of Microelectronics;  Southern University of Science and Technology
First Author's First AffilicationSUSTech Institute of Microelectronics
Recommended Citation
GB/T 7714
Su, Longxing,Li, Tingfen,Zhu, Yuan. A vertical CsPbBr3/ZnO heterojunction for photo-sensing lights from UV to green band[J]. OPTICS EXPRESS,2022,30(13):23330-23340.
APA
Su, Longxing,Li, Tingfen,&Zhu, Yuan.(2022).A vertical CsPbBr3/ZnO heterojunction for photo-sensing lights from UV to green band.OPTICS EXPRESS,30(13),23330-23340.
MLA
Su, Longxing,et al."A vertical CsPbBr3/ZnO heterojunction for photo-sensing lights from UV to green band".OPTICS EXPRESS 30.13(2022):23330-23340.
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