Title | A vertical CsPbBr3/ZnO heterojunction for photo-sensing lights from UV to green band |
Author | |
Corresponding Author | Su, Longxing; Zhu, Yuan |
Publication Years | 2022-06-20
|
DOI | |
Source Title | |
ISSN | 1094-4087
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Volume | 30Issue:13Pages:23330-23340 |
Abstract | In this work, we have reported a vertical CsPbBr3/ZnO heterojunction photodetector for photo-sensing lights from UV to visible band. The ZnO thin film is deposited on the c-sapphire substrate through a molecular beam epitaxy (MBE) technique, and then the CsPbBr3 thin film is synthesized on the as-prepared ZnO film layer by using a solution processing method. The as-prepared CsPbBr3/ZnO heterostructure presents type-II energy band structure induced by the energy band offset effect, which can promote the separation and extraction efficiencies of the photo-generated electron-hole pairs. Compared with the CsPbBr3 based metal-semiconductor-metal (MSM) structure photodetector, the heterojunction photodetector presents higher responsivity and detectivity of 630 mu A/W and 7 x 10(9) Jones. While compared with the ZnO based MSM structure photodetector, the heterojunction device reveals much faster response speeds of 61 mu s (rise time) and 1.4 ms (decay time). These findings demonstrate that the CsPbBr3/ZnO heterojunction photodetector is promising for constructing next generation perovskite based optoelectronic devices. (C) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement |
URL | [Source Record] |
Indexed By | |
Language | English
|
SUSTech Authorship | First
; Corresponding
|
Funding Project | National Natural Science Foundation of China[52172149,61705043,51872132,52122607]
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WOS Research Area | Optics
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WOS Subject | Optics
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WOS Accession No | WOS:000813479600086
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Publisher | |
EI Accession Number | 20222512247459
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EI Keywords | Band structure
; Bromine compounds
; Film preparation
; Heterojunctions
; II-VI semiconductors
; Lead compounds
; Metallic films
; Molecular beam epitaxy
; Perovskite
; Photodetectors
; Photons
; Sapphire
; Thin films
; Wide band gap semiconductors
|
ESI Classification Code | Minerals:482.2
; Gems:482.2.1
; Semiconducting Materials:712.1
; Semiconductor Devices and Integrated Circuits:714.2
; Inorganic Compounds:804.2
; Atomic and Molecular Physics:931.3
; Solid State Physics:933
; Crystal Growth:933.1.2
|
ESI Research Field | PHYSICS
|
Data Source | Web of Science
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Citation statistics |
Cited Times [WOS]:3
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Document Type | Journal Article |
Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/353378 |
Department | SUSTech Institute of Microelectronics |
Affiliation | 1.Southern Univ Sci & Technol, Sch Microelect, Shenzhen 518055, Peoples R China 2.Fudan Univ, Dept Mat Sci, Shanghai 200433, Peoples R China 3.Southern Univ Sci & Technol, Engn Res Ctr Integrated Circuits Next Generat Com, Minist Educ, Shenzhen 518055, Peoples R China |
First Author Affilication | SUSTech Institute of Microelectronics |
Corresponding Author Affilication | SUSTech Institute of Microelectronics; Southern University of Science and Technology |
First Author's First Affilication | SUSTech Institute of Microelectronics |
Recommended Citation GB/T 7714 |
Su, Longxing,Li, Tingfen,Zhu, Yuan. A vertical CsPbBr3/ZnO heterojunction for photo-sensing lights from UV to green band[J]. OPTICS EXPRESS,2022,30(13):23330-23340.
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APA |
Su, Longxing,Li, Tingfen,&Zhu, Yuan.(2022).A vertical CsPbBr3/ZnO heterojunction for photo-sensing lights from UV to green band.OPTICS EXPRESS,30(13),23330-23340.
|
MLA |
Su, Longxing,et al."A vertical CsPbBr3/ZnO heterojunction for photo-sensing lights from UV to green band".OPTICS EXPRESS 30.13(2022):23330-23340.
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