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Title

Engineering topological states in atom-based semiconductor quantum dots

Author
Corresponding AuthorSimmons, M. Y.
Publication Years
2022-06-23
DOI
Source Title
ISSN
0028-0836
EISSN
1476-4687
Volume606Issue:7915
Abstract
The realization of controllable fermionic quantum systems via quantum simulation is instrumental for exploring many of the most intriguing effects in condensed-matter physics(1-3). Semiconductor quantum dots are particularly promising for quantum simulation as they can be engineered to achieve strong quantum correlations. However, although simulation of the Fermi-Hubbard model(4) and Nagaoka ferromagnetism(5) have been reported before, the simplest one-dimensional model of strongly correlated topological matter, the many-body Su-Schrieffer-Heeger (SSH) model(6-11), has so far remained elusive-mostly owing to the challenge of precisely engineering long-range interactions between electrons to reproduce the chosen Hamiltonian. Here we show that for precision-placed atoms in silicon with strong Coulomb confinement, we can engineer a minimum of six all-epitaxial in-plane gates to tune the energy levels across a linear array of ten quantum dots to realize both the trivial and the topological phases of the many-body SSH model. The strong on-site energies (about 25 millielectronvolts) and the ability to engineer gates with subnanometre precision in a unique staggered design allow us to tune the ratio between intercell and intracell electron transport to observe clear signatures of a topological phase with two conductance peaks at quarter-filling, compared with the ten conductance peaks of the trivial phase. The demonstration of the SSH model in a fermionic system isomorphic to qubits showcases our highly controllable quantum system and its usefulness for future simulations of strongly interacting electrons.
URL[Source Record]
Indexed By
Language
English
Important Publications
NI Journal Papers
SUSTech Authorship
Others
Funding Project
Australian Research Council Centre of Excellence for Quantum Computation and Communication Technology[CE170100012]
WOS Research Area
Science & Technology - Other Topics
WOS Subject
Multidisciplinary Sciences
WOS Accession No
WOS:000815861700029
Publisher
ESI Research Field
BIOLOGY & BIOCHEMISTRY;CLINICAL MEDICINE;MULTIDISCIPLINARY;PLANT & ANIMAL SCIENCE;ENVIRONMENT/ECOLOGY;SOCIAL SCIENCES, GENERAL;MICROBIOLOGY;ECONOMICS BUSINESS;IMMUNOLOGY;MATERIALS SCIENCE;COMPUTER SCIENCE;SPACE SCIENCE;MOLECULAR BIOLOGY & GENETICS;CHEMISTRY;NEUROSCIENCE & BEHAVIOR;PHYSICS;GEOSCIENCES;ENGINEERING
Data Source
Web of Science
Citation statistics
Cited Times [WOS]:17
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/353380
DepartmentInstitute for Quantum Science and Engineering
Affiliation
1.UNSW Sydney, Sch Phys, Ctr Excellence Quantum Computat & Commun Technol, Kensington, NSW, Australia
2.UNSW Sydney, Silicon Quantum Comp Pty Ltd, Kensington, NSW, Australia
3.Southern Univ Sci & Technol, Shenzhen Inst Quantum Sci & Engn, Shenzhen, Peoples R China
Recommended Citation
GB/T 7714
Kiczynski, M.,Gorman, S. K.,Geng, H.,et al. Engineering topological states in atom-based semiconductor quantum dots[J]. NATURE,2022,606(7915).
APA
Kiczynski, M..,Gorman, S. K..,Geng, H..,Donnelly, M. B..,Chung, Y..,...&Simmons, M. Y..(2022).Engineering topological states in atom-based semiconductor quantum dots.NATURE,606(7915).
MLA
Kiczynski, M.,et al."Engineering topological states in atom-based semiconductor quantum dots".NATURE 606.7915(2022).
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