中文版 | English
Title

Observation of Magnetism-Induced Topological Edge State in Antiferromagnetic Topological Insulator MnBi4Te7

Author
Corresponding AuthorZheng, Hao; Jia, Jinfeng
Publication Years
2022-06-01
DOI
Source Title
ISSN
1936-0851
EISSN
1936-086X
Volume16Pages:9810-9818
Abstract
Breaking time reversal symmetry in a topological insulator may lead to quantum anomalous Hall effect and axion insulator phase. MnBi4Te7 is a recently discovered antiferromagnetic topological insulator with TN similar to 12.5 K, which is composed of an alternatively stacked magnetic layer (MnBi2Te4) and nonmagnetic layer (Bi2Te3). By means of scanning tunneling spectroscopy, we clearly observe the electronic state present at a step edge of a magnetic MnBi2Te4 layer but absent at nonmagnetic Bi2Te3 layers at 4.5 K. Furthermore, we find that as the temperature rises above TN the edge state vanishes, while the point defect induced state persists upon an increase in temperature. These results confirm the observation of magnetism-induced edge states. Our analysis based on an axion insulator theory reveals that the nontrivial topological nature of the observed edge state.
Keywords
URL[Source Record]
Indexed By
SCI ; EI
Language
English
Important Publications
NI Journal Papers
SUSTech Authorship
Others
Funding Project
NSFC[11790313,92065201,11874256,11874258,12074247,12174252,11861161003,12025404,11904165] ; Ministry of Science and Technology of China["2019YFA0308600","2020YFA0309000","2017YFA0303203"] ; Strategic Priority Research Program of Chinese Academy of Sciences[XDB28000000] ; Science and Technology Commission of Shanghai Municipality["2019SHZDZX01","19JC1412701","20QA1405100"] ; Natural Science Foundation of Jiangsu Province[BK20190286]
WOS Research Area
Chemistry ; Science & Technology - Other Topics ; Materials Science
WOS Subject
Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary
WOS Accession No
WOS:000820055000001
Publisher
EI Accession Number
20222812351699
EI Keywords
Bismuth compounds ; Electric insulators ; Manganese compounds ; Quantum Hall effect ; Scanning tunneling microscopy ; Tellurium compounds ; Topological insulators ; Topology
ESI Classification Code
Magnetism: Basic Concepts and Phenomena:701.2 ; Combinatorial Mathematics, Includes Graph Theory, Set Theory:921.4 ; Classical Physics; Quantum Theory; Relativity:931
Data Source
Web of Science
Citation statistics
Cited Times [WOS]:3
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/353384
DepartmentInstitute for Quantum Science and Engineering
理学院_物理系
Affiliation
1.Shanghai Jiao Tong Univ, Sch Phys & Astron, Tsung Dao Lee Inst,Shenyang Natl Lab Mat Sci, Key Lab Artificial Struct & Quantum Control,Minis, Shanghai 200240, Peoples R China
2.Southern Univ Sci & Technol, Shenzhen Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China
3.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
4.Nanjing Univ, Collaborat Innovat Ctr Adv Microstruct, Natl Lab Solid State Microstruct, Nanjing 210093, Peoples R China
5.Nanjing Univ, Coll Phys, Nanjing 210093, Peoples R China
6.Shanghai Jiao Tong Univ, Zhiyuan Coll, Shanghai 200240, Peoples R China
Recommended Citation
GB/T 7714
Xu, Hao-Ke,Gu, Mingqiang,Fei, Fucong,et al. Observation of Magnetism-Induced Topological Edge State in Antiferromagnetic Topological Insulator MnBi4Te7[J]. ACS Nano,2022,16:9810-9818.
APA
Xu, Hao-Ke.,Gu, Mingqiang.,Fei, Fucong.,Gu, Yi-Sheng.,Liu, Dang.,...&Jia, Jinfeng.(2022).Observation of Magnetism-Induced Topological Edge State in Antiferromagnetic Topological Insulator MnBi4Te7.ACS Nano,16,9810-9818.
MLA
Xu, Hao-Ke,et al."Observation of Magnetism-Induced Topological Edge State in Antiferromagnetic Topological Insulator MnBi4Te7".ACS Nano 16(2022):9810-9818.
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