中文版 | English
Title

A Fast Recovery Vertical Superjunction MOSFET with n-Si and p-3C-SiC Pillars

Author
Corresponding AuthorWang,Qing; Yu,Hongyu
Publication Years
2022-07-01
DOI
Source Title
EISSN
2073-4352
Volume12Issue:7
Abstract

In the traditional SJ MOSFET structure, n/p pillars with the same doping concentrations in the drift region are introduced to decrease the on-resistance. However, SJ MOSFET will turn on the parasitic diodes due to fast reverse recovery, further inducing severe oscillation in the reverse recovery of the device and the corresponding adverse effect on the circuit. In this study, a fast recovery vertical superjunction (SJ) MOSFET with n-Si and p-3C-SiC pillars was studied. Unlike other structures, such as the 4H-SiC superjunction UMOSFET with a heterojunction diode or the ultra-low recovery charge cell-distributed Schottky contacts SJ-MOSFET with integrated isolated NMOS, we introduce a Schottky barrier diode (SBD) on the source contact at the top of the n-Si pillar in the SJ-MOSFET to improve the device reverse recovery. The simulation software TCAD Silvaco was utilized to simulate the device properties. Compared with the conventional Si SJ, the proposed Si/SiC SJ with the Schottky barrier diode (SBD) connected demonstrated a lower reverse recovery charge, which was reduced by 90.5%, respectively. The waveform of the reverse recovery current demonstrates that the electrons in the device are withdrawn from SBD during reverse recovery, preventing the opening of the parasitic diode in the SJ MOSFET. Finally, another structure is illustrated to decrease the gate capacitance by introducing a thin p-base layer between the gate metal and N-Si pillar so that it can improve the switching characteristics of devices. The open-loss and off-loss of the improved device were reduced by 33% and 42.3%, respectively.

Keywords
URL[Source Record]
Indexed By
Language
English
SUSTech Authorship
First ; Corresponding
Funding Project
Guangdong Key Research and Development Program of China[2019B010143001]
WOS Research Area
Crystallography ; Materials Science
WOS Subject
Crystallography ; Materials Science, Multidisciplinary
WOS Accession No
WOS:000833198100001
Publisher
Scopus EID
2-s2.0-85133428919
Data Source
Web of Science
Citation statistics
Cited Times [WOS]:1
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/355676
DepartmentSUSTech Institute of Microelectronics
Affiliation
1.School of Microelectronics,Southern University of Science and Technology,Shenzhen,518055,China
2.The Key Laboratory of the Third Generation Semiconductor,Southern University of Science and Technology,Shenzhen,518055,China
3.Founder Microelectronics International Co.,Ltd.,Shenzhen,518116,China
First Author AffilicationSUSTech Institute of Microelectronics;  Southern University of Science and Technology
Corresponding Author AffilicationSUSTech Institute of Microelectronics;  Southern University of Science and Technology;  
First Author's First AffilicationSUSTech Institute of Microelectronics
Recommended Citation
GB/T 7714
Gao,Rongyu,Cheng,Hongyu,Li,Wenmao,et al. A Fast Recovery Vertical Superjunction MOSFET with n-Si and p-3C-SiC Pillars[J]. CRYSTALS,2022,12(7).
APA
Gao,Rongyu.,Cheng,Hongyu.,Li,Wenmao.,Deng,Chenkai.,Chen,Jianguo.,...&Yu,Hongyu.(2022).A Fast Recovery Vertical Superjunction MOSFET with n-Si and p-3C-SiC Pillars.CRYSTALS,12(7).
MLA
Gao,Rongyu,et al."A Fast Recovery Vertical Superjunction MOSFET with n-Si and p-3C-SiC Pillars".CRYSTALS 12.7(2022).
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crystals-12-00916.pd(905KB) Restricted Access--
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