中文版 | English
Title

Investigation of External Quantum Efficiency of GaN-based Micro-LEDs GaN基Micro-LED的外量子效率研究

Author
Corresponding AuthorLiu,Zhaojun
Publication Years
2022-06-01
DOI
Source Title
ISSN
1001-5868
Volume43Issue:3Pages:522-528
Abstract
GaN-based micro-sized light-emitting diodes (micro-LED) has gradually become the main light source in many optoelectronic devices such as visible light communications and next-generation displays. Low external quantum efficiency (EQE), caused by non-radiative recombination and quantum confined Stark effect (QCSE), is the main bottleneck in applications of micro-LEDs. In this report, the reasons for low EQE of micro-LEDs are discussed, and the physical characteristics of micro-LEDs are analyzed and several optimal methods are suggested to improve EQE.
Keywords
URL[Source Record]
Language
Chinese
SUSTech Authorship
First ; Corresponding
Scopus EID
2-s2.0-85133600677
Data Source
Scopus
Citation statistics
Cited Times [WOS]:0
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/355921
DepartmentSouthern University of Science and Technology
Affiliation
Dept. of Electrical and Electronic Engin.,Southern University of Science and Technology,Shenzhen,518000,China
First Author AffilicationSouthern University of Science and Technology
Corresponding Author AffilicationSouthern University of Science and Technology
First Author's First AffilicationSouthern University of Science and Technology
Recommended Citation
GB/T 7714
Yang,Hang,Huang,Wenjun,Zhang-Hu,Mengyuan,等. Investigation of External Quantum Efficiency of GaN-based Micro-LEDs GaN基Micro-LED的外量子效率研究[J]. 半导体光电,2022,43(3):522-528.
APA
Yang,Hang,Huang,Wenjun,Zhang-Hu,Mengyuan,Lin,Yonghong,&Liu,Zhaojun.(2022).Investigation of External Quantum Efficiency of GaN-based Micro-LEDs GaN基Micro-LED的外量子效率研究.半导体光电,43(3),522-528.
MLA
Yang,Hang,et al."Investigation of External Quantum Efficiency of GaN-based Micro-LEDs GaN基Micro-LED的外量子效率研究".半导体光电 43.3(2022):522-528.
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