| Title | High Quantum Yield InP/ZnMnS/ZnS Quantum Dots |
| Author | |
| Corresponding Author | Sun，Xiao Wei |
| DOI | |
| Publication Years | 2019
|
| ISSN | 0097-966X
|
| EISSN | 2168-0159
|
| Source Title | |
| Volume | 50
|
| Issue | 1
|
| Pages | 1716-1719
|
| Abstract | In this work, we synthesized InP/ZnMnS/ZnS QDs. Compared with InP/ZnSe/ZnS QDs, the bandgap of MnS (3.7 eV) is wider than that of ZnSe (2.7 eV), which avoid the type II structure formed relative to InP/ZnSe/ZnS QDs. The lattice constant of MnS is close to InP at the same time (mismatch 4.3%), which reduce the lattice mismatch between the core and shell, the highest QY reached 80% for the InP/ZnMnS/ZnS QDs. Finally, the QDs were made into QLED with EQE of 0.7% and brightness of 2010 cd/cm. |
| Keywords | |
| SUSTech Authorship | First
; Corresponding
|
| Language | English
|
| URL | [Source Record] |
| Indexed By | |
| Funding Project | National Natural Science Foundation of China[51502020];National Natural Science Foundation of China[61405089];National Natural Science Foundation of China[61674074];
|
| EI Accession Number | 20222812334284
|
| EI Keywords | II-VI semiconductors
; III-V semiconductors
; Indium phosphide
; Lattice mismatch
; Manganese compounds
; Nanocrystals
; Selenium compounds
; Semiconducting indium phosphide
; Semiconductor quantum dots
; Zinc compounds
|
| ESI Classification Code | Semiconducting Materials:712.1
; Compound Semiconducting Materials:712.1.2
; Semiconductor Devices and Integrated Circuits:714.2
; Nanotechnology:761
; Inorganic Compounds:804.2
; Crystalline Solids:933.1
; Crystal Lattice:933.1.1
|
| Scopus EID | 2-s2.0-85073185671
|
| Data Source | Scopus
|
| Citation statistics |
Cited Times [WOS]:0
|
| Document Type | Conference paper |
| Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/355961 |
| Department | Department of Electrical and Electronic Engineering |
| Affiliation | 1.Guangdong University Key Lab for Advanced Quantum Dot Display and Lighting,Shenzhen Key Lab for Advanced Quantum Dot Display and Lighting,and Department of Electrical & Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China 2.National Engineering Research Center for Rare Earth Materials,General Research Institute for Nonferrous Metals,and Grirem Advanced Materials Co.,Ltd.,Beijing,100088,China 3.Shenzhen Planck Innovation Technologies Co. Ltd.,Shenzhen,Guangdong,China |
| First Author Affilication | Department of Electrical and Electronic Engineering |
| Corresponding Author Affilication | Department of Electrical and Electronic Engineering |
| First Author's First Affilication | Department of Electrical and Electronic Engineering |
| Recommended Citation GB/T 7714 |
Zhang，Wenda,Zhuang，Weidong,Qu，Xiangwei,et al. High Quantum Yield InP/ZnMnS/ZnS Quantum Dots[C],2019:1716-1719.
|
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