Title | A review of MEMS-based metal oxide semiconductors gas sensor in Mainland China |
Author | |
Corresponding Author | Wang, Fei |
Publication Years | 2022-05
|
DOI | |
Source Title | |
ISSN | 0960-1317
|
EISSN | 1361-6439
|
Volume | 32 |
Abstract | With the growing demand for gas monitoring in various fields as the fast development of the internet of things, metal oxide semiconductors (MOSs) gas sensors based on the advanced microelectromechanical systems (MEMS) technology have achieved great developments in the past decades, especially in mainland China. This review summarizes the development of MEMS-based MOSs gas sensors in terms of the MEMS micro-hotplate, wafer-scale deposition and patterning methods for MOS materials, and several latest applications. Various designs of the micro-hotplates have been proposed, particularly, the suspended membrane type with low power consumption. By combining the 'bottom up' and the 'top down' strategies, MEMS provides a promising solution for wafer-scale fabrication process of MOSs based gas sensors, which have been successfully applied for the detection of ethanol, H2, H2S, toluene, HCHO, Freon etc. With the diversiform nano-structures of MOSs and emerging machine learning algorithm, great progress has been made recently on the aspects of the sensing performance, pulse heating and intelligent sensing systems.
© 2022 IOP Publishing Ltd. |
Indexed By | |
Language | English
|
SUSTech Authorship | First
; Corresponding
|
WOS Accession No | WOS:000772178300001
|
Publisher | |
EI Accession Number | 20221611971321
|
EI Keywords | Chemical sensors
; Dielectric devices
; Electromechanical devices
; Gas detectors
; Gases
; Learning algorithms
; MEMS
; Metallic compounds
; Metals
; Nanostructures
; Oxide semiconductors
; Silicon wafers
; Transistors
|
ESI Classification Code | Electric Equipment:704.2
; Semiconducting Materials:712.1
; Semiconductor Devices and Integrated Circuits:714.2
; Machine Learning:723.4.2
; Nanotechnology:761
; Chemistry:801
; Accidents and Accident Prevention:914.1
; Solid State Physics:933
; Special Purpose Instruments:943.3
|
ESI Research Field | ENGINEERING
|
Data Source | EV Compendex
|
Citation statistics |
Cited Times [WOS]:5
|
Document Type | Journal Article |
Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/355964 |
Department | SUSTech Institute of Microelectronics |
Affiliation | 1.School of Microelectronics, Southern University of Science and Technology, Shenzhen; 518055, China 2.Engineering Research Center of Integrated Circuits for Next-Generation Communications, Southern University of Science and Technology, Shenzhen; 518055, China |
First Author Affilication | SUSTech Institute of Microelectronics |
Corresponding Author Affilication | SUSTech Institute of Microelectronics; Southern University of Science and Technology |
First Author's First Affilication | SUSTech Institute of Microelectronics |
Recommended Citation GB/T 7714 |
Niu, Gaoqiang,Wang, Fei. A review of MEMS-based metal oxide semiconductors gas sensor in Mainland China[J]. JOURNAL OF MICROMECHANICS AND MICROENGINEERING,2022,32.
|
APA |
Niu, Gaoqiang,&Wang, Fei.(2022).A review of MEMS-based metal oxide semiconductors gas sensor in Mainland China.JOURNAL OF MICROMECHANICS AND MICROENGINEERING,32.
|
MLA |
Niu, Gaoqiang,et al."A review of MEMS-based metal oxide semiconductors gas sensor in Mainland China".JOURNAL OF MICROMECHANICS AND MICROENGINEERING 32(2022).
|
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