中文版 | English
Title

A review of MEMS-based metal oxide semiconductors gas sensor in Mainland China

Author
Corresponding AuthorWang, Fei
Publication Years
2022-05
DOI
Source Title
ISSN
0960-1317
EISSN
1361-6439
Volume32
Abstract
With the growing demand for gas monitoring in various fields as the fast development of the internet of things, metal oxide semiconductors (MOSs) gas sensors based on the advanced microelectromechanical systems (MEMS) technology have achieved great developments in the past decades, especially in mainland China. This review summarizes the development of MEMS-based MOSs gas sensors in terms of the MEMS micro-hotplate, wafer-scale deposition and patterning methods for MOS materials, and several latest applications. Various designs of the micro-hotplates have been proposed, particularly, the suspended membrane type with low power consumption. By combining the 'bottom up' and the 'top down' strategies, MEMS provides a promising solution for wafer-scale fabrication process of MOSs based gas sensors, which have been successfully applied for the detection of ethanol, H2, H2S, toluene, HCHO, Freon etc. With the diversiform nano-structures of MOSs and emerging machine learning algorithm, great progress has been made recently on the aspects of the sensing performance, pulse heating and intelligent sensing systems.

© 2022 IOP Publishing Ltd.

Indexed By
SCI ; EI
Language
English
SUSTech Authorship
First ; Corresponding
WOS Accession No
WOS:000772178300001
Publisher
EI Accession Number
20221611971321
EI Keywords
Chemical sensors ; Dielectric devices ; Electromechanical devices ; Gas detectors ; Gases ; Learning algorithms ; MEMS ; Metallic compounds ; Metals ; Nanostructures ; Oxide semiconductors ; Silicon wafers ; Transistors
ESI Classification Code
Electric Equipment:704.2 ; Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Machine Learning:723.4.2 ; Nanotechnology:761 ; Chemistry:801 ; Accidents and Accident Prevention:914.1 ; Solid State Physics:933 ; Special Purpose Instruments:943.3
ESI Research Field
ENGINEERING
Data Source
EV Compendex
Citation statistics
Cited Times [WOS]:5
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/355964
DepartmentSUSTech Institute of Microelectronics
Affiliation
1.School of Microelectronics, Southern University of Science and Technology, Shenzhen; 518055, China
2.Engineering Research Center of Integrated Circuits for Next-Generation Communications, Southern University of Science and Technology, Shenzhen; 518055, China
First Author AffilicationSUSTech Institute of Microelectronics
Corresponding Author AffilicationSUSTech Institute of Microelectronics;  Southern University of Science and Technology
First Author's First AffilicationSUSTech Institute of Microelectronics
Recommended Citation
GB/T 7714
Niu, Gaoqiang,Wang, Fei. A review of MEMS-based metal oxide semiconductors gas sensor in Mainland China[J]. JOURNAL OF MICROMECHANICS AND MICROENGINEERING,2022,32.
APA
Niu, Gaoqiang,&Wang, Fei.(2022).A review of MEMS-based metal oxide semiconductors gas sensor in Mainland China.JOURNAL OF MICROMECHANICS AND MICROENGINEERING,32.
MLA
Niu, Gaoqiang,et al."A review of MEMS-based metal oxide semiconductors gas sensor in Mainland China".JOURNAL OF MICROMECHANICS AND MICROENGINEERING 32(2022).
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