Dual-metal precursors for the universal growth of non-layered 2D transition metal chalcogenides with ordered cation vacancies
|Corresponding Author||Zhao，Yue; Lin，Junhao; Liu，Bilu; Cheng，Hui Ming|
Two-dimensional (2D) transition metal chalcogenides (TMCs) are promising for nanoelectronics and energy applications. Among them, the emerging non-layered TMCs are unique due to their unsaturated dangling bonds on the surface and strong intralayer and interlayer bonding. However, the synthesis of non-layered 2D TMCs is challenging and this has made it difficult to study their structures and properties at thin thickness limit. Here, we develop a universal dual-metal precursors method to grow non-layered TMCs in which a mixture of a metal and its chloride serves as the metal source. Taking hexagonal FeS as an example, the thickness of the FeS flakes is down to 3 nm with a lateral size of over 100 μm. Importantly, we find ordered cation Fe vacancies in FeS, which is distinct from layered TMCs like MoS where anion vacancies are commonly observed. Low-temperature transport measurements and theoretical calculations show that 2D FeS is a stable semiconductor with a narrow bandgap of ∼60 meV. In addition to FeS, the method is universal in growing various non-layered 2D TMCs containing ordered cation vacancies, including FeSe, CoS, CrS, and VS. This work paves the way to grow and exploit properties of non-layered materials at 2D thickness limit.
National Natural Science Foundation of China ; Guangdong Province Introduction of Innovative R&D Team[2017ZT07C341] ; Guangdong Province Introduction of Innovative R&D Team[2019ZT08C044] ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Natural Science Foundation of China ; National Science Fund for Distinguished Young Scholars ; National Natural Science Foundation of China
|WOS Research Area|
Science & Technology - Other Topics
|WOS Accession No|
|EI Accession Number|
Chalcogenides ; Chlorine Compounds ; Dangling Bonds ; Layered Semiconductors ; Molybdenum Compounds ; Positive Ions ; Sulfur Compounds ; Temperature ; Transition Metals
|ESI Classification Code|
Metallurgy And Metallography:531 ; Thermodynamics:641.1 ; Semiconducting Materials:712.1 ; Physical Chemistry:801.4 ; Chemical Reactions:802.2 ; Inorganic Compounds:804.2 ; Atomic And Molecular Physics:931.3
Cited Times [WOS]:4
|Document Type||Journal Article|
|Department||Department of Physics|
1.Shenzhen Geim Graphene Center,Tsinghua-Berkeley Shenzhen Institute and Institute of Materials Research,Shenzhen International Graduate School,Tsinghua University,Shenzhen,518055,China
2.Department of Physics and Shenzhen Key Laboratory of Advanced Quantum Functional Materials and Devices,Southern University of Science and Technology,Shenzhen,518055,China
3.School of Electronic Information Engineering,Foshan University,Foshan,528000,China
4.Shenyang National Laboratory for Materials Science,Institute of Metal Research,Chinese Academy of Sciences,Shenyang,110016,China
5.Faculty of Materials Science and Engineering/Institute of Technology for Carbon Neutrality,Shenzhen Institute of Advanced Technology,Chinese Academy of Sciences,Shenzhen,518055,China
|Corresponding Author Affilication||Department of Physics|
Tan，Junyang,Zhang，Zongteng,Zeng，Shengfeng,et al. Dual-metal precursors for the universal growth of non-layered 2D transition metal chalcogenides with ordered cation vacancies[J]. Science Bulletin,2022,67(16):1649-1658.
Tan，Junyang.,Zhang，Zongteng.,Zeng，Shengfeng.,Li，Shengnan.,Wang，Jingwei.,...&Cheng，Hui Ming.(2022).Dual-metal precursors for the universal growth of non-layered 2D transition metal chalcogenides with ordered cation vacancies.Science Bulletin,67(16),1649-1658.
Tan，Junyang,et al."Dual-metal precursors for the universal growth of non-layered 2D transition metal chalcogenides with ordered cation vacancies".Science Bulletin 67.16(2022):1649-1658.
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