Ohmic-Schottky conversion of ZnO/metal contact modulated by a plasma surface treatment method
|Corresponding Author||Su，Longxing; Zhu，Yuan|
Herein, we present a systematical investigation with regard to the Ar/N/O plasma surface treatments on the ZnO thin films prepared by a radio frequency plasma-assisted molecular beam epitaxy (RF MBE) technique. The as-deposited ZnO thin films are exposed to the Ar, N and O plasma atmospheres under different RF powers. The conductivity and the surface morphology of the post-treated ZnO thin films are strongly depending on the treatment species and the RF powers. Higher RF power results in lower resistance and reduces the grain boundaries of the surface. Indium and gold metals are designed as the Ohmic and Schottky contact electrodes, respectively. The ZnO/Au contacts based on both pre-treated films and Ar/N plasma-treated films show obvious Ohmic contact behaviors. However, In/ZnO/Au the devices fabricated on the ZnO thin film which exposes to the O plasma show distinct rectified behavior, indicating the conversion of ZnO/Au contact from Ohmic type to Schottky type. The O plasma treatment may play two key roles within the contact conversion: 1, removing the surface contaminants such as carbon, absorbed oxygen and hydroxide; 2, repairing the defects (V), thus reducing the near surface donor density and defect assisted hopping transportation.
First ; Corresponding
National Natural Science Foundation of China;National Natural Science Foundation of China;National Natural Science Foundation of China;National Natural Science Foundation of China;
Cited Times [WOS]:0
|Document Type||Journal Article|
|Department||SUSTech Institute of Microelectronics|
1.School of Microelectronics,Southern University of Science and Technology,Shenzhen,518055,China
2.Key Laboratory of Energy Conversion and Storage Technologies (Southern University of Science and Technology),Ministry of Education,Shenzhen,518055,China
3.Department of Electrical and Computer Engineering,Bourns College of Engineering,University of California-Riverside,Riverside,92521,United States
|First Author Affilication||SUSTech Institute of Microelectronics|
|Corresponding Author Affilication||SUSTech Institute of Microelectronics; Southern University of Science and Technology|
|First Author's First Affilication||SUSTech Institute of Microelectronics|
Su，Longxing,Guan，Zhaoyun,Liu，Qiushi,et al. Ohmic-Schottky conversion of ZnO/metal contact modulated by a plasma surface treatment method[J]. Results in Materials,2022,15.
Su，Longxing,Guan，Zhaoyun,Liu，Qiushi,&Zhu，Yuan.(2022).Ohmic-Schottky conversion of ZnO/metal contact modulated by a plasma surface treatment method.Results in Materials,15.
Su，Longxing,et al."Ohmic-Schottky conversion of ZnO/metal contact modulated by a plasma surface treatment method".Results in Materials 15(2022).
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