| Title | Ohmic Contact with a Contact Resistivity of 12 Ω∙mm on p-GaN/AlGaN/GaN |
| Author | |
| Corresponding Author | Jiang，Yu Long; Wang，Qing; Yu，Hong Yu |
| Publication Years | 2022
|
| DOI | |
| Source Title | |
| ISSN | 1558-0563
|
| EISSN | 1558-0563
|
| Volume | 43Issue:9Pages:1412-1415 |
| Abstract | A robust ohmic contact process with ultralow contact resistivity on p-GaN/AlGaN/GaN is demonstrated. An in-situ removal of GaOX interfacial layer after contact metal deposition is developed. Using the novel Mg/Pt/Au stack as the contact metal, a stable ohmic contact is obtained after 450 degrees C/300 s annealing with ohmic contact resistivity of 12 Omega . mm (1.8 x 10(-5) Omega . cm(2)). A new ohmic contact formation mechanism on p-GaN/AlGaN/GaN is also proposed. |
| Keywords | |
| URL | [Source Record] |
| Indexed By | |
| Language | English
|
| SUSTech Authorship | First
|
| Funding Project | Research on the Fabrication and Mechanism of GaN Power and RF Devices[
|
| WOS Research Area | Engineering
|
| WOS Subject | Engineering, Electrical & Electronic
|
| WOS Accession No | WOS:000845067200009
|
| Publisher | |
| EI Accession Number | 20223112531097
|
| EI Keywords | Behavioral Research
; Electric Contactors
; Gallium Nitride
; Gold
; Gold Compounds
; III-V Semiconductors
; Ohmic Contacts
; Platinum
|
| ESI Classification Code | Ergonomics And Human Factors Engineering:461.4
; Precious Metals:547.1
; Semiconducting Materials:712.1
; Social Sciences:971
|
| ESI Research Field | ENGINEERING
|
| Scopus EID | 2-s2.0-85135212880
|
| Data Source | Web of Science
|
| PDF url | https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9834920 |
| Citation statistics |
Cited Times [WOS]:2
|
| Document Type | Journal Article |
| Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/365065 |
| Department | SUSTech Institute of Microelectronics |
| Affiliation | 1.School of Microelectronics, Southern University of Science and Technology, Shenzhen, China 2.School of Microelectronics, China 3.School of Microelectronics, Fudan University, Shanghai, China |
| First Author Affilication | SUSTech Institute of Microelectronics |
| First Author's First Affilication | SUSTech Institute of Microelectronics |
| Recommended Citation GB/T 7714 |
Tang，Chu Ying,Lu，Hong Hao,Qiao，Ze Peng,et al. Ohmic Contact with a Contact Resistivity of 12 Ω∙mm on p-GaN/AlGaN/GaN[J]. IEEE Electron Device Letters,2022,43(9):1412-1415.
|
| APA |
Tang，Chu Ying.,Lu，Hong Hao.,Qiao，Ze Peng.,Jiang，Yang.,Du，Fang Zhou.,...&Yu，Hong Yu.(2022).Ohmic Contact with a Contact Resistivity of 12 Ω∙mm on p-GaN/AlGaN/GaN.IEEE Electron Device Letters,43(9),1412-1415.
|
| MLA |
Tang，Chu Ying,et al."Ohmic Contact with a Contact Resistivity of 12 Ω∙mm on p-GaN/AlGaN/GaN".IEEE Electron Device Letters 43.9(2022):1412-1415.
|
| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| Ohmic_Contact_With_a（5517KB） | Restricted Access | -- | ||||
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