Enhanced Deep Ultraviolet Photoresponse in Ga doped ZnMgO Thin Film

Ye, Mao1; Wang, Dongbo2; Jiao, Shujie2; Chen, Lang1

2022-07-01

10.3390/mi13071140

MICROMACHINES   Impact Factor & Quartile

2072-666X

High Mg content (60%) ZnMgO samples with and without Ga dope were grown by an RF magnetron sputtering system. The effect of Ga dope on the ZnMgO sample and the respective ultraviolet photodetectors (UVPD) device's performance were carefully studied by various experimental methods. The investigations of the structure and optical properties of the ZnMgO sample established that the Ga doped sample has a better crystal quality and larger band gap (5.54 eV). The current-voltage characteristics indicate that both the photocurrent and dark current were enhanced after Ga dope. Under 12 V bias, the undoped UVPD show two spectral response peaks at 244 nm and 271 nm with a responsivity of 1.9 A/W and 0.38 A/W, respectively. While the Ga doped UVPD showed only one response peak at 241 nm and the deep UV responsibility up to 8.9 A/W;, as the bias increased from 12 V to 60 V, the responsiveness raised to 52 A/W, with a signal to noise ratio (241 nm/700 nm) as high as 10(5). Combining the results of XRD, PL spectrum and XPS, the enhanced ultraviolet photoresponse of the Ga dope device contributed to improving the crystal quality and "dopant-defect pairing effect" caused by Ga doping, which led to a considerable reduction in the number of ionized impurities in the scatting centers, and enhanced the carrier's mobility. Our work demonstrates that even a high Mg content ZnMgO can exhibit enhanced UV performance after a Ga dope due to the dopant-defect pairing effect, which confirmed the advantage of the use of ZnMgO in the deep-UV region.

deep-UV ZnMgO Ga dope Ga2O3 magnetron sputtering

SCI ; EI

English

First ; Corresponding

Science and Technology Research Items of Shenzhen["JCYJ20180504165650580","JCYJ20190809142603695"]

Chemistry ; Science & Technology - Other Topics ; Instruments & Instrumentation ; Physics

Chemistry, Analytical ; Nanoscience & Nanotechnology ; Instruments & Instrumentation ; Physics, Applied

WOS:000834477000001

MDPI

20223612702073

Crystal impurities ; Crystal structure ; Current voltage characteristics ; Defects ; Energy gap ; Gallium ; Magnesium ; Magnetron sputtering ; Optical properties ; Semiconductor doping

Magnesium and Alloys:542.2 ; Alkaline Earth Metals:549.2 ; Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Semiconducting Materials:712.1 ; Light/Optics:741.1 ; Crystal Lattice:933.1.1 ; Materials Science:951

Web of Science

1.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Peoples R China
2.Harbin Inst Technol, Sch Mat Sci & Engn, Dept Optoelect Informat Sci, Harbin 150001, Peoples R China

Ye, Mao,Wang, Dongbo,Jiao, Shujie,et al. Enhanced Deep Ultraviolet Photoresponse in Ga doped ZnMgO Thin Film[J]. MICROMACHINES,2022,13(7).

Ye, Mao,Wang, Dongbo,Jiao, Shujie,&Chen, Lang.(2022).Enhanced Deep Ultraviolet Photoresponse in Ga doped ZnMgO Thin Film.MICROMACHINES,13(7).

Ye, Mao,et al."Enhanced Deep Ultraviolet Photoresponse in Ga doped ZnMgO Thin Film".MICROMACHINES 13.7(2022).