Enhanced magnetoresistance and electroresistance at high temperature in a nano-matrix manganite

Xu，Hang1,2; Huang，Ke3; Li，Changjian4; Qi，Ji1,2; Li，Jiaming1; Sun，Guiru1; Wang，Fujun1; Li，Haibo1; Sun，Yong3; Ye，Chen3; Yang，Liu5; Pan，Yongjing5; Feng，Ming1; Lü，Weiming2

2022-10-01

10.1016/j.actamat.2022.118219

ACTA MATERIALIA   Impact Factor & Quartile

1359-6454

1873-2453

Magnetoresistance (MR) is highly exploitable to future spintronics devices, such as random-access memory, magnetic sensors, and spin-based neuromorphic electronics. Conventionally the enhanced MR in manganite always companies a sacrifice of Curie temperature, which limits its widespread application potential. Here we report a high-temperature survived MR in a LaSrMnO (LSMO) film grown on a piezoelectric substrate. The lattice mismatch between the film and substrate creates a self-assembled nano-matrix with two types of nanoscale matrices, namely [001]- and [101]-orientated LSMO magnetic domains. In this structure, the MR can reach -67% at even 350 K. Furthermore, the resistance of LSMO is electric-field-tunable to multiple resistance states by electrically modulating the biaxial strain imposed by the underlying piezoelectric substrate, an additional ∼14.2% electroresistance (ER) can be obtained. The achievements of high-temperature substantial MR and its electrical tunability in the nano-matrix manganite are of use to future multi-state memory devices in both spintronics and straintronics.

High-temperature Magnetoresistance Manganite Nonvolatility Texture structures

EI ; SCI

English

Others

National Natural Science Foundation of China[21978110];National Natural Science Foundation of China[51772126];National Natural Science Foundation of China[52171210];

Materials Science ; Metallurgy & Metallurgical Engineering

Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering

WOS:000891945500006

PERGAMON-ELSEVIER SCIENCE LTD

20223212553885

Electric resistance ; Lanthanum compounds ; Lattice mismatch ; Magnetic domains ; Magnetic storage ; Magnetoresistance ; Nanomagnetics ; Piezoelectricity ; Random access storage ; Strontium compounds ; Substrates ; Textures

Electricity: Basic Concepts and Phenomena:701.1 ; Magnetism: Basic Concepts and Phenomena:701.2 ; Data Storage, Equipment and Techniques:722.1 ; Inorganic Compounds:804.2 ; Crystal Lattice:933.1.1

MATERIALS SCIENCE

2-s2.0-85135562257

Scopus

1.Key Laboratory of Functional Materials Physics and Chemistry of the Ministry of Education,Jilin Normal University,Changchun,130103,China
2.Functional Materials and Acousto-Optic Instruments Institute,School of Instrumentation Science and Engineering,School of Instrumentation Science and Engineering,Harbin Institute of Technology,Harbin,150080,China
3.School of Physical and Mathematical Sciences,Nanyang Technological University,Singapore,639371,Singapore
4.Department of Materials Science and Engineering,Southern University of Science and Technology,Guangdong,518055,China
5.Raffles Institution,Singapore,1 Raffles Institution Lane,575954,Singapore

Xu，Hang,Huang，Ke,Li，Changjian,et al. Enhanced magnetoresistance and electroresistance at high temperature in a nano-matrix manganite[J]. ACTA MATERIALIA,2022,238.

Xu，Hang.,Huang，Ke.,Li，Changjian.,Qi，Ji.,Li，Jiaming.,...&Lü，Weiming.(2022).Enhanced magnetoresistance and electroresistance at high temperature in a nano-matrix manganite.ACTA MATERIALIA,238.

Xu，Hang,et al."Enhanced magnetoresistance and electroresistance at high temperature in a nano-matrix manganite".ACTA MATERIALIA 238(2022).