Title | Plasma-enabled electrochemical jet micromachining of chemically inert and passivating material |
Author | |
Corresponding Author | Zhao, Yonghua |
Publication Years | 2022-12-01
|
DOI | |
Source Title | |
ISSN | 2631-8644
|
EISSN | 2631-7990
|
Volume | 4Issue:4 |
Abstract | Electrochemical jet machining (EJM) encounters significant challenges in the microstructuring of chemically inert and passivating materials because an oxide layer is easily formed on the material surface, preventing the progress of electrochemical dissolution. This research demonstrates for the first time a jet-electrolytic plasma micromachining (Jet-EPM) method to overcome this problem. Specifically, an electrolytic plasma is intentionally induced at the jet-material contact area by applying a potential high enough to surmount the surface boundary layer (such as a passive film or gas bubble) and enable material removal. Compared to traditional EJM, introducing plasma in the electrochemical jet system leads to considerable differences in machining performance due to the inclusion of plasma reactions. In this work, the implementation of Jet-EPM for fabricating microstructures in the semiconductor material 4H-SiC is demonstrated, and the machining principle and characteristics of Jet-EPM, including critical parameters and process windows, are comprehensively investigated. Theoretical modeling and experiments have elucidated the mechanisms of plasma ignition/evolution and the corresponding material removal, showing the strong potential of Jet-EPM for micromachining chemically resistant materials. The present study considerably augments the range of materials available for processing by the electrochemical jet technique. |
Keywords | |
URL | [Source Record] |
Indexed By | |
Language | English
|
SUSTech Authorship | First
; Corresponding
|
Funding Project | National Key R&D Program of China[2021YFF0501700]
; National Natural Science Foundation of China[51905255]
; Project of Guangdong Provincial Department of Education[2019KTSCX152]
; Shenzhen Science and Technology Program[GJHZ20200731095204014]
|
WOS Research Area | Engineering
; Materials Science
|
WOS Subject | Engineering, Manufacturing
; Materials Science, Multidisciplinary
|
WOS Accession No | WOS:000837839500001
|
Publisher | |
EI Accession Number | 20223412595489
|
EI Keywords | Boundary layers
; Micromachining
; Passivation
; Silicon carbide
; Wide band gap semiconductors
|
ESI Classification Code | Protection Methods:539.2.1
; Machining Operations:604.2
; Semiconducting Materials:712.1
; Inorganic Compounds:804.2
|
Data Source | Web of Science
|
Citation statistics |
Cited Times [WOS]:3
|
Document Type | Journal Article |
Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/382286 |
Department | Department of Mechanical and Energy Engineering |
Affiliation | Southern Univ Sci & Technol, Dept Mech & Energy Engn, Shenzhen 518055, Peoples R China |
First Author Affilication | Department of Mechanical and Energy Engineering |
Corresponding Author Affilication | Department of Mechanical and Energy Engineering |
First Author's First Affilication | Department of Mechanical and Energy Engineering |
Recommended Citation GB/T 7714 |
Lu, Jiajun,Zhan, Shunda,Liu, Bowen,et al. Plasma-enabled electrochemical jet micromachining of chemically inert and passivating material[J]. International Journal of Extreme Manufacturing,2022,4(4).
|
APA |
Lu, Jiajun,Zhan, Shunda,Liu, Bowen,&Zhao, Yonghua.(2022).Plasma-enabled electrochemical jet micromachining of chemically inert and passivating material.International Journal of Extreme Manufacturing,4(4).
|
MLA |
Lu, Jiajun,et al."Plasma-enabled electrochemical jet micromachining of chemically inert and passivating material".International Journal of Extreme Manufacturing 4.4(2022).
|
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