Flexoelectric engineering of van der Waals ferroelectric CuInP2S6

Ming, Wenjie1,2,3; Huang, Boyuan1,4; Zheng, Sizheng5; Bai, Yinxin6; Wang, Junling6; Wang, Jie5,7; Li, Jiangyu1,4

2022-08-19

10.1126/sciadv.abq1232

Science Advances   Impact Factor & Quartile

2375-2548

Van der Waals layered CuInP2S6 (CIPS) is an ideal candidate for developing two-dimensional microelectronic heterostructures because of its room temperature ferroelectricity, although field-driven polarization reversal of CIPS is intimately coupled with ionic migration, often causing erratic and damaging switching that is highly undesirable for device applications. In this work, we develop an alternative switching mechanism for CIPS using flexoelectric effect, abandoning external electric fields altogether, and the method is motivated by strong correlation between polarization and topography variation of CIPS. Phase-field simulation identifies a critical radius of curvature around 5 mu m for strain gradient to be effective, which is realized by engineered topographic surfaces using silver nanowires and optic grating upon which CIPS is transferred to. We also demonstrate mechanical modulation of CIPS on demand via strain gradient underneath a scanning probe, making it possible to engineer multiple polarization states of CIPS for device applications.

SCI ; EI

English

NI Journal Papers

First ; Corresponding

National Natural Science Foundation of China["12192213","11972320","12102164","12074164"] ; Leading Talents Program of Guangdong Province[2016LJ06C372] ; Guangdong Provincial Key Laboratory Program from the Department of Science and Technology of Guangdong Province[2021B1212040001] ; Guangdong Basic and Applied Basic Research Foundation[2020A1515110989] ; Key Research Project of Zhejiang Laboratory[2021PE0AC02] ; Shenzhen Science and Technology Program[RCBS20210609103201007] ; Guangdong Provincial Department of Education Innovation Team Program[2021KCXTD012]

Science & Technology - Other Topics

Multidisciplinary Sciences

WOS:000842064500032

AMER ASSOC ADVANCEMENT SCIENCE

20223712736875

Electric fields ; Ferroelectricity ; Indium compounds ; Microelectronics ; Polarization ; Topography ; Van der Waals forces

Electricity: Basic Concepts and Phenomena:701.1 ; Physical Chemistry:801.4 ; Atomic and Molecular Physics:931.3 ; Materials Science:951

Web of Science

1.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Guangdong, Peoples R China
2.Xiangtan Univ, Sch Mat Sci & Engn, Hunan Prov Key Lab Thin Film Mat & Devices, Xiangtan 411105, Hunan, Peoples R China
3.Chinese Acad Sci, Shenzhen Inst Adv Technol, Shenzhen Key Lab Nanobiomech, Shenzhen 518055, Guangdong, Peoples R China
4.Southern Univ Sci & Technol, Guangdong Prov Key Lab Funct Oxide Mat & Devices, Shenzhen 518055, Guangdong, Peoples R China
5.Zhejiang Univ, Sch Aeronaut & Astronaut, Dept Engn Mech, Hangzhou 310058, Zhejiang, Peoples R China
6.Southern Univ Sci & Technol, Dept Phys, Shenzhen 518055, Guangdong, Peoples R China
7.Zhejiang Lab, Hangzhou 311100, Zhejiang, Peoples R China

Ming, Wenjie,Huang, Boyuan,Zheng, Sizheng,et al. Flexoelectric engineering of van der Waals ferroelectric CuInP2S6[J]. Science Advances,2022,8(33).

Ming, Wenjie.,Huang, Boyuan.,Zheng, Sizheng.,Bai, Yinxin.,Wang, Junling.,...&Li, Jiangyu.(2022).Flexoelectric engineering of van der Waals ferroelectric CuInP2S6.Science Advances,8(33).

Ming, Wenjie,et al."Flexoelectric engineering of van der Waals ferroelectric CuInP2S6".Science Advances 8.33(2022).