Ferroelectric Memory Based on Topological Domain Structures: A Phase Field Simulation

Huang，Jing1; Tan，Pengfei1; Wang，Fang2; Li，Bo1,3

2022-06-01

10.3390/cryst12060786

Crystals   Impact Factor & Quartile

2073-4352

The low storage density of ferroelectric thin film memory currently limits the further application of ferroelectric memory. Topologies based on controllable ferroelectric domain structures offer opportunities to develop microelectronic devices such as high-density memories. This study uses ferroelectric topology domains in a ferroelectric field-effect transistor (FeFET) structure for memory. The electrical behavior of FeFET and its flip properties under strain and electric fields are investigated using a phase-field model combined with the device equations of field-effect transistors. When the dimensionless electric field changes from −0.10 to 0.10, the memory window drops from 2.49 V to 0.6 V and the on-state current drops from 2.511 mA to 1.951 mA; the off-state current grows from 1.532 mA to 1.877 mA. External tensile stress increases the memory window and off-state current, while compressive stress decreases it. This study shows that a ferroelectric topology can be used as memory and could significantly increase the storage density of ferroelectric memory.

domain switching phase-field simulations polar topologies topological domain

SCI

English

Corresponding

China Postdoctoral Science Foundation[2019M663178];

WOS:000818250300001

2-s2.0-85131689023

Scopus

1.School of Materials and Engineering,Xiangtan University,Xiangtan,411105,China
2.Institute of Biomedical & Health Engineering,Shenzhen Institute of Advanced Technology (SIAT),Chinese Academy of Sciences (CAS),Shenzhen,518035,China
3.Department of Materials Science and Engineering,Southern University of Science and Technology,Shenzhen,518055,China

Huang，Jing,Tan，Pengfei,Wang，Fang,et al. Ferroelectric Memory Based on Topological Domain Structures: A Phase Field Simulation[J]. Crystals,2022,12(6).

Huang，Jing,Tan，Pengfei,Wang，Fang,&Li，Bo.(2022).Ferroelectric Memory Based on Topological Domain Structures: A Phase Field Simulation.Crystals,12(6).

Huang，Jing,et al."Ferroelectric Memory Based on Topological Domain Structures: A Phase Field Simulation".Crystals 12.6(2022).