| Title | Negative Gate Bias Induced Dynamic ON-Resistance Degradation in Schottky-Type p-Gan Gate HEMTs |
| Author | |
| Corresponding Author | Hua, Mengyuan |
| Publication Years | 2022-05
|
| DOI | |
| Source Title | |
| ISSN | 1941-0107
|
| Volume | 37Issue:5Pages:6018-6025 |
| Keywords | |
| URL | [Source Record] |
| Indexed By | |
| SUSTech Authorship | First
; Corresponding
|
| EI Accession Number | 20214911284954
|
| EI Keywords | Bias voltage
; Computer circuits
; Dynamics
; Gallium nitride
; High electron mobility transistors
; Impact ionization
; Logic gates
; Semiconductor junctions
; Switching
|
| ESI Classification Code | Semiconducting Materials:712.1
; Electronic Circuits:713
; Semiconductor Devices and Integrated Circuits:714.2
; Logic Elements:721.2
; Computer Circuits:721.3
; Chemical Reactions:802.2
|
| Data Source | IEEE
|
| PDF url | https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9627573 |
| Citation statistics |
Cited Times [WOS]:4
|
| Document Type | Journal Article |
| Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/395680 |
| Department | Department of Electrical and Electronic Engineering |
| Affiliation | Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China |
| First Author Affilication | Department of Electrical and Electronic Engineering |
| Corresponding Author Affilication | Department of Electrical and Electronic Engineering |
| First Author's First Affilication | Department of Electrical and Electronic Engineering |
| Recommended Citation GB/T 7714 |
Jiang, Zuoheng,Hua, Mengyuan,Huang, Xinran,et al. Negative Gate Bias Induced Dynamic ON-Resistance Degradation in Schottky-Type p-Gan Gate HEMTs[J]. IEEE Transactions on Power Electronics,2022,37(5):6018-6025.
|
| APA |
Jiang, Zuoheng.,Hua, Mengyuan.,Huang, Xinran.,Li, Lingling.,Wang, Chengcai.,...&Chen, Kevin J..(2022).Negative Gate Bias Induced Dynamic ON-Resistance Degradation in Schottky-Type p-Gan Gate HEMTs.IEEE Transactions on Power Electronics,37(5),6018-6025.
|
| MLA |
Jiang, Zuoheng,et al."Negative Gate Bias Induced Dynamic ON-Resistance Degradation in Schottky-Type p-Gan Gate HEMTs".IEEE Transactions on Power Electronics 37.5(2022):6018-6025.
|
| Files in This Item: | There are no files associated with this item. | |||||
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