Interfacial Passivation Engineering for Highly Efficient Perovskite Solar Cells with a Fill Factor over 83%

Ji, Xiaofei3; Feng, Kui3; Ma, Suxiang3; Wang, Junwei3; Liao, Qiaogan3; Wang, Zhaojin1,2; Li, Bolin3; Huang, Jiachen3; Sun, Huiliang3; Wang, Kai1,2; Guo, Xugang3,4

2022-08-23

10.1021/acsnano.2c01547

ACS Nano   Impact Factor & Quartile

1936-0851

1936-086X

Charge carrier nonradiative recombination (NRR) caused by interface defects and nonoptimal energy level alignment is the primary factor restricting the performance improvement of perovskite solar cells (PSCs). Interfacial modification is a vital strategy to restrain NRR and enable high-performance PSCs. We report here two interfacial materials, PhI-TPA and BTZI-TPA, consisting of phthalimide and a 2,1,3-benzothiadiazole-5,6-dicarboxylicimide core, respectively. The difunctionalized BTZI-TPA with imide and thiadiazole shows higher hole mobility, better aligned energy levels, and stronger interaction with uncoordinated Pb2+ on the perovskite surface, suppressing NRR and carrier accumulation at the interface of perovskite/spiro-OMeTAD and yielding enhanced open-circuit voltage and fill factor. Consequently, the PSC based on BTZI-TPA delivers a high efficiency of 24.06% with an excellent fill factor of 83.10%, superior to that (21.47%) of the reference cell without an interfacial layer, and 21.45% efficiency for the device with a scaled-up area (1.00 cm(2)). These results underscore the potential of imide and thiadiazole groups in developing interfacial layers with strong passivation capability, effective charge transport property, and fine-tuned energetics for stable and efficient PSCs.

perovskite solar cells interfacial layer energy level alignment nonradiative recombination stability

SCI ; EI

English

NI Journal Papers

First ; Corresponding

Guangdong Basic and Applied Basic Research Foundation[2021A151- 5011640] ; Shenzhen Basic Research Fund["JCYJ20180504165709042","JCYJ20190809162003662"] ; National Natural Science Foundation of China["21774055","22005135"] ; Department of Science and Technology of Guangdong Province[2021B1212040001]

Chemistry ; Science & Technology - Other Topics ; Materials Science

Chemistry, Multidisciplinary ; Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:000846763400001

AMER CHEMICAL SOC

20223412606111

Cell engineering ; Hole mobility ; Lead compounds ; Open circuit voltage ; Passivation ; Perovskite

Biomedical Engineering:461.1 ; Minerals:482.2 ; Protection Methods:539.2.1 ; Solar Cells:702.3 ; Semiconducting Materials:712.1

Web of Science

1.Southern Univ Sci & Technol, Guangdong Univ Key Lab Adv Quantum Dot Displays &, Guangdong Hong Kong Macao Joint Lab Photon Thermal, Shenzhen 518055, Guangdong, Peoples R China
2.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Guangdong, Peoples R China
3.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Guangdong, Peoples R China
4.Southern Univ Sci & Technol, Guangdong Prov Key Lab Funct Oxide Mat & Devices, Shenzhen 518055, Guangdong, Peoples R China

Ji, Xiaofei,Feng, Kui,Ma, Suxiang,et al. Interfacial Passivation Engineering for Highly Efficient Perovskite Solar Cells with a Fill Factor over 83%[J]. ACS Nano,2022,16(8):11902-11911.

Ji, Xiaofei.,Feng, Kui.,Ma, Suxiang.,Wang, Junwei.,Liao, Qiaogan.,...&Guo, Xugang.(2022).Interfacial Passivation Engineering for Highly Efficient Perovskite Solar Cells with a Fill Factor over 83%.ACS Nano,16(8),11902-11911.

Ji, Xiaofei,et al."Interfacial Passivation Engineering for Highly Efficient Perovskite Solar Cells with a Fill Factor over 83%".ACS Nano 16.8(2022):11902-11911.