红外探测芯片和红外探测器

本发明公开了一种红外探测芯片和红外探测器。红外探测芯片包括光学部件、红外探测阵列和光电读出模块，红外探测阵列包括多个阵列排布的红外探测单元，红外探测单元能够在激发光的作用下发出可见光且还能够在红外辐射的作用下发生温度变化以使得可见光的强度发生变化。可见光的强度与红外探测单元的温度大小负相关，红外探测单元的温度大小与接收的红外辐射的强度正相关。光电读出模块的光电读出单元与红外探测单元一一对应，光电读出单元用于检测红外探测单元发出的可见光的强度并转化为电信号。如此，可将红外辐射的分布转化为可见光的光强分布，最后可用电信号的变化来得出各个不同位置和区域的红外辐射强度以实现对热源的红外成像。

The invention discloses an infrared detection chip and an infrared detector. The infrared detection chip comprises an optical component, an infrared detection array and a photoelectric reading module, the infrared detection array comprises a plurality of infrared detection units which are arranged in an array, and the infrared detection units can emit visible light under the action of exciting light and can change temperature under the action of infrared radiation so as to change the intensity of the visible light. The intensity of the visible light is in negative correlation with the temperature of the infrared detection unit, and the temperature of the infrared detection unit is in positive correlation with the intensity of the received infrared radiation. Photoelectric reading units of the photoelectric reading module are in one-to-one correspondence with the infrared detection units, and the photoelectric reading units are used for detecting the intensity of visible light emitted by the infrared detection units and converting the intensity into electric signals. Therefore, the distribution of infrared radiation can be converted into the light intensity distribution of visible light, and finally, the infrared radiation intensity of different positions and areas can be obtained through the change of electric signals, so that infrared imaging of a heat source is realized.