| Title | 每单元多位三维电阻随机存取存储器 (3D-RRAM) |
| Alternative Title | Multi-bit-per-cell three-dimensional resistive random-access memory (3D-RRAM)
|
| Author | |
| First Inventor | ZHANG, GUOBIAO
|
| Address of First Inventor | Corvallis, OR, US
|
| Original applicant | ZHANG, GUOBIAO
|
| First applicant | ZHANG, GUOBIAO
|
| Address of First applicant | Corvallis, OR, US
|
| Current applicant | SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY
|
| Address of Current applicant | GuangDong, CN
|
| First Current Applicant | SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY
|
| Address of First Current Applicant | GuangDong, CN
|
| Application Number | US16/921879
|
| Application Date | 2020-07-06
|
| Open (Notice) Number | US20200350030A1
|
| Date Available | 2021-11-09
|
| Publication Years | 2021-11-09
|
| Status of Patent | 授权
|
| Legal Date | 2021-10-20
|
| Subtype | 授权发明
|
| SUSTech Authorship | First
|
| Abstract | 本发明公开了一种每单元多比特的三维电阻随机存取存储器(3D-RRAM MB )。 它包括多个堆叠在半导体衬底上方的 RRAM 单元。 每个 RRAM 单元包括一个 RRAM 层,该层在编程期间从高电阻状态切换到低电阻状态。 通过调整编程电流,被编程的 RRAM 具有不同的电阻。 |
| Other Abstract | The present invention discloses a multi-bit-per-cell three-dimensional resistive random-access memory (3D-RRAMMB). It comprises a plurality of RRAM cells stacked above a semiconductor substrate. Each RRAM cell comprises a RRAM layer, which is switched from a high-resistance state to a low-resistance state during programming. By adjusting the programming current, the programmed RRAMs have different resistances. |
| CPC Classification Number | G11C17/165
; G11C7/14
; G11C11/5692
; G11C13/004
; G11C13/0069
; G11C17/16
; G11C17/18
; G11C29/78
; G11C2013/0042
; G11C2013/0054
; G11C2013/0078
; G11C2213/71
; G11C2216/12
; G11C11/56
; G11C11/5685
; G11C13/0026
; G11C13/0028
; G11C13/0061
; G11C29/028
; G11C29/24
; G11C2013/0057
; G11C2029/5006
; G11C2213/15
; G11C2213/33
; G11C2213/72
; G11C2213/73
|
| IPC Classification Number | G11C17/16
; G11C29/00
; G11C7/14
; G11C11/56
; G11C13/00
; G11C17/18
|
| Language | Chinese
|
| INPADOC Legal Status | （INFORMATION ON STATUS: PATENT GRANT）[2021-10-20][US]
|
| INPADOC Patent Family Count | 16
|
| Extended Patent Family Count | 16
|
| Priority country | CN
|
| Priority number | 201610238012.7
|
| Priority date | 2016-04-14
|
| URL | [Source Record] |
| Data Source | PatSnap
|
| Document Type | Patent |
| Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/401343 |
| Department | SUSTech Institute of Microelectronics 前沿与交叉科学研究院 工学院_材料科学与工程系 南方科技大学-香港科技大学深港微电子学院筹建办公室 |
| Affiliation | 1.Corvallis, OR, US 2.ShenZhen, CN |
| Recommended Citation GB/T 7714 |
ZHANG, GUOBIAO,LI, YIDA,XIANG, XIAODONG,等. 每单元多位三维电阻随机存取存储器 (3D-RRAM)[P]. 2021-11-09.
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| Files in This Item: | ||||||
| File Name/Size | DocType | Version | Access | License | ||
| 张国飙-US11170863.pdf（877KB） | Restricted Access | -- | ||||
| 张国飙US5Y7_200730_Fili（192KB） | Restricted Access | -- | ||||
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