中文版 | English
Title

每单元多位三维电阻随机存取存储器 (3D-RRAM)

Alternative Title
Multi-bit-per-cell three-dimensional resistive random-access memory (3D-RRAM)
Author
First Inventor
ZHANG, GUOBIAO
Address of First Inventor
Corvallis, OR, US
Original applicant
ZHANG, GUOBIAO
First applicant
ZHANG, GUOBIAO
Address of First applicant
Corvallis, OR, US
Current applicant
SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY
Address of Current applicant
GuangDong, CN
First Current Applicant
SOUTHERN UNIVERSITY OF SCIENCE AND TECHNOLOGY
Address of First Current Applicant
GuangDong, CN
Application Number
US16/921879
Application Date
2020-07-06
Open (Notice) Number
US20200350030A1
Date Available
2021-11-09
Publication Years
2021-11-09
Status of Patent
授权
Legal Date
2021-10-20
Subtype
授权发明
SUSTech Authorship
First
Abstract

本发明公开了一种每单元多比特的三维电阻随机存取存储器(3D-RRAM MB )。 它包括多个堆叠在半导体衬底上方的 RRAM 单元。 每个 RRAM 单元包括一个 RRAM 层,该层在编程期间从高电阻状态切换到低电阻状态。 通过调整编程电流,被编程的 RRAM 具有不同的电阻。

Other Abstract

The present invention discloses a multi-bit-per-cell three-dimensional resistive random-access memory (3D-RRAMMB). It comprises a plurality of RRAM cells stacked above a semiconductor substrate. Each RRAM cell comprises a RRAM layer, which is switched from a high-resistance state to a low-resistance state during programming. By adjusting the programming current, the programmed RRAMs have different resistances.

CPC Classification Number
G11C17/165 ; G11C7/14 ; G11C11/5692 ; G11C13/004 ; G11C13/0069 ; G11C17/16 ; G11C17/18 ; G11C29/78 ; G11C2013/0042 ; G11C2013/0054 ; G11C2013/0078 ; G11C2213/71 ; G11C2216/12 ; G11C11/56 ; G11C11/5685 ; G11C13/0026 ; G11C13/0028 ; G11C13/0061 ; G11C29/028 ; G11C29/24 ; G11C2013/0057 ; G11C2029/5006 ; G11C2213/15 ; G11C2213/33 ; G11C2213/72 ; G11C2213/73
IPC Classification Number
G11C17/16 ; G11C29/00 ; G11C7/14 ; G11C11/56 ; G11C13/00 ; G11C17/18
Language
Chinese
INPADOC Legal Status
(INFORMATION ON STATUS: PATENT GRANT)[2021-10-20][US]
INPADOC Patent Family Count
16
Extended Patent Family Count
16
Priority country
CN
Priority number
201610238012.7
Priority date
2016-04-14
URL[Source Record]
Data Source
PatSnap
Document TypePatent
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/401343
DepartmentSUSTech Institute of Microelectronics
前沿与交叉科学研究院
工学院_材料科学与工程系
南方科技大学-香港科技大学深港微电子学院筹建办公室
Affiliation
1.Corvallis, OR, US
2.ShenZhen, CN
Recommended Citation
GB/T 7714
ZHANG, GUOBIAO,LI, YIDA,XIANG, XIAODONG,等. 每单元多位三维电阻随机存取存储器 (3D-RRAM)[P]. 2021-11-09.
Files in This Item:
File Name/Size DocType Version Access License
张国飙-US11170863.pdf(877KB) Restricted Access--
张国飙US5Y7_200730_Fili(192KB) Restricted Access--
Related Services
Fulltext link
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Export to Excel
Export to Csv
Altmetrics Score
Google Scholar
Similar articles in Google Scholar
[ZHANG, GUOBIAO]'s Articles
[LI, YIDA]'s Articles
[XIANG, XIAODONG]'s Articles
Baidu Scholar
Similar articles in Baidu Scholar
[ZHANG, GUOBIAO]'s Articles
[LI, YIDA]'s Articles
[XIANG, XIAODONG]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[ZHANG, GUOBIAO]'s Articles
[LI, YIDA]'s Articles
[XIANG, XIAODONG]'s Articles
Terms of Use
No data!
Social Bookmark/Share
No comment.

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.