中文版 | English
Title

A TCAD Simulation Study on the Short-circuit Performance of 650V P-pillar Offset Super-junction MOSFET

Author
Corresponding AuthorHuaiyu Ye
DOI
Publication Years
2022
Conference Name
2022 23rd International Conference on Electronic Packaging Technology (ICEPT)
ISBN
978-1-6654-9906-4
Source Title
Pages
1-4
Conference Date
10-13 Aug. 2022
Conference Place
Dalian, China
Keywords
SUSTech Authorship
First ; Corresponding
URL[Source Record]
Data Source
IEEE
PDF urlhttps://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9873366
Citation statistics
Cited Times [WOS]:0
Document TypeConference paper
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/401526
DepartmentSUSTech Institute of Microelectronics
Affiliation
1.School of Microelectronic, Southern University of Science and Technology, Shenzhen, China
2.Fac.EEMCS Delft University of Technology Delft, Netherlands
First Author AffilicationSouthern University of Science and Technology
Corresponding Author AffilicationSouthern University of Science and Technology
First Author's First AffilicationSouthern University of Science and Technology
Recommended Citation
GB/T 7714
Wucheng Yuan,Ke Liu,Shaogang Wang,et al. A TCAD Simulation Study on the Short-circuit Performance of 650V P-pillar Offset Super-junction MOSFET[C],2022:1-4.
Files in This Item:
There are no files associated with this item.
Related Services
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Export to Excel
Export to Csv
Altmetrics Score
Google Scholar
Similar articles in Google Scholar
[Wucheng Yuan]'s Articles
[Ke Liu]'s Articles
[Shaogang Wang]'s Articles
Baidu Scholar
Similar articles in Baidu Scholar
[Wucheng Yuan]'s Articles
[Ke Liu]'s Articles
[Shaogang Wang]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Wucheng Yuan]'s Articles
[Ke Liu]'s Articles
[Shaogang Wang]'s Articles
Terms of Use
No data!
Social Bookmark/Share
No comment.

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.