HEMT Controlled Ultraviolet Light Emitters Enabled by P-GaN Selective Epitaxial Growth

Zhang，Jingyang1; Huang，Wei2; Su，Zhihao1; Liang，Zhiwen3; Wang，Qi3; Lun，Au Yeng Wai4; Zhang，D. W.2; Liu，Zhaojun1

2022

10.1109/LED.2022.3199986

IEEE ELECTRON DEVICE LETTERS   Impact Factor & Quartile

0741-3106

1558-0563

This letter demonstrates a novel HEMT controlled ultraviolet light emitter by directly modifying the drain of AlGaN/GaN HEMTs. The selective epitaxial growth (SEG) p-GaN on HEMTs contacts with two dimensional electron gas (2DEG) to form a lateral p-GaN/2DEG junction, which utilizes the recombination of holes in p-GaN and high-density electrons in 2DEG to realize luminescence. Our results show that the ultraviolet light with a maximum intensity of 374.9 nm is emitted by the new devices, which is also able to realize color conversion by driving quantum dots (QDs). The new method shows an idea of converting electrical devices into light-emitting devices, which is different from the traditional integration. This work represents the first light emitting HEMT without integrated LEDs.

2DEG AlGaN/GaN HEMT Aluminum gallium nitride Epitaxial growth HEMTs Junctions Light emitting diodes MODFETs p-GaN Ultraviolet Light Wide band gap semiconductors

SCI ; EI

English

First

Engineering

Engineering, Electrical & Electronic

WOS:000861441600029

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC

20223512675883

Aluminum gallium nitride ; Energy gap ; Epitaxial growth ; Gallium nitride ; High electron mobility transistors ; III-V semiconductors ; Light emission ; Light emitting diodes ; Semiconductor junctions ; Two dimensional electron gas ; Ultraviolet radiation ; Wide band gap semiconductors

Semiconducting Materials:712.1 ; Semiconductor Devices and Integrated Circuits:714.2 ; Light/Optics:741.1 ; Chemical Operations:802.3 ; Inorganic Compounds:804.2 ; Crystal Growth:933.1.2

ENGINEERING

2-s2.0-85136843830

Scopus

1.Department of electronic and electrical engineering, Southern University of Science and Technology, Shenzhen, Guangdong, China
2.Shanghai Institute of Intelligent Electronics & Systems, School of Microelectronics, A State Key Laboratory of ASIC and System, Fudan University, Shanghai, China
3.Dongguan Institute of Opto-Electronics Peking University, Dongguan, China
4.M-MOS Semiconductor Hong Kong Ltd, China

Zhang，Jingyang,Huang，Wei,Su，Zhihao,et al. HEMT Controlled Ultraviolet Light Emitters Enabled by P-GaN Selective Epitaxial Growth[J]. IEEE ELECTRON DEVICE LETTERS,2022,43(10):1693-1696.

Zhang，Jingyang.,Huang，Wei.,Su，Zhihao.,Liang，Zhiwen.,Wang，Qi.,...&Liu，Zhaojun.(2022).HEMT Controlled Ultraviolet Light Emitters Enabled by P-GaN Selective Epitaxial Growth.IEEE ELECTRON DEVICE LETTERS,43(10),1693-1696.

Zhang，Jingyang,et al."HEMT Controlled Ultraviolet Light Emitters Enabled by P-GaN Selective Epitaxial Growth".IEEE ELECTRON DEVICE LETTERS 43.10(2022):1693-1696.