Investigation of bowing effect of 4’’ epitaxial wafer and reliability of gan-based micro-led devices
GaN-based Micro-LEDs have shown great potential in various filed, such as solid-state lighting, display, sensor, visible light communication and multifunctional devices. The performance of Micro-LEDs in various operating environment drew enormous attention recently. We investigate the fabrication process of Micro-LED devices with 4’’ epitaxial wafer. The problems occurred during the process, especially bowing effect, were systematically introduced. Several solutions have been proposed and compared. In addition, the characterization and reliability test were measured to show sufficient quality of those devices.
|EI Accession Number|
Gallium nitride ; III-V semiconductors ; Light emitting diodes
|ESI Classification Code|
Semiconductor Devices and Integrated Circuits:714.2 ; Computer Peripheral Equipment:722.2
Cited Times [WOS]:0
|Document Type||Conference paper|
|Department||Department of Electrical and Electronic Engineering|
1.State Key Laboratory of Advanced Displays and Optoelectronics Technologies,the Hong Kong University of Science and Technology,Hong Kong
2.Department of Electrical and Electronic Engineering,Southern University of Science and Technology,China
Zhang，Ke,Liu，Yibo,Sun，Xiaowei,等. Investigation of bowing effect of 4’’ epitaxial wafer and reliability of gan-based micro-led devices[C],2021:601-604.
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