Investigation of bowing effect of 4’’ epitaxial wafer and reliability of gan-based micro-led devices

Zhang，Ke1; Liu，Yibo1; Sun，Xiaowei2; Liu，Zhaojun1,2; Kwok，Hoi Sing1

10.1002/sdtp.14569

2021

0097-966X

2168-0159

Digest of Technical Papers - SID International Symposium

52

S1

601-604

GaN-based Micro-LEDs have shown great potential in various filed, such as solid-state lighting, display, sensor, visible light communication and multifunctional devices. The performance of Micro-LEDs in various operating environment drew enormous attention recently. We investigate the fabrication process of Micro-LED devices with 4’’ epitaxial wafer. The problems occurred during the process, especially bowing effect, were systematically introduced. Several solutions have been proposed and compared. In addition, the characterization and reliability test were measured to show sufficient quality of those devices.

4” wafer Bowing effect Micro-LED Reliability

Others

English

EI

20213710880321

Gallium nitride ; III-V semiconductors ; Light emitting diodes

Semiconductor Devices and Integrated Circuits:714.2 ; Computer Peripheral Equipment:722.2

2-s2.0-85114461819

Scopus

1.State Key Laboratory of Advanced Displays and Optoelectronics Technologies,the Hong Kong University of Science and Technology,Hong Kong
2.Department of Electrical and Electronic Engineering,Southern University of Science and Technology,China

Zhang，Ke,Liu，Yibo,Sun，Xiaowei,等. Investigation of bowing effect of 4’’ epitaxial wafer and reliability of gan-based micro-led devices[C],2021:601-604.