中文版 | English
Title

Investigation of bowing effect of 4’’ epitaxial wafer and reliability of gan-based micro-led devices

Author
DOI
Publication Years
2021
ISSN
0097-966X
EISSN
2168-0159
Source Title
Volume
52
Issue
S1
Pages
601-604
Abstract
GaN-based Micro-LEDs have shown great potential in various filed, such as solid-state lighting, display, sensor, visible light communication and multifunctional devices. The performance of Micro-LEDs in various operating environment drew enormous attention recently. We investigate the fabrication process of Micro-LED devices with 4’’ epitaxial wafer. The problems occurred during the process, especially bowing effect, were systematically introduced. Several solutions have been proposed and compared. In addition, the characterization and reliability test were measured to show sufficient quality of those devices.
Keywords
SUSTech Authorship
Others
Language
English
URL[Source Record]
Indexed By
EI Accession Number
20213710880321
EI Keywords
Gallium nitride ; III-V semiconductors ; Light emitting diodes
ESI Classification Code
Semiconductor Devices and Integrated Circuits:714.2 ; Computer Peripheral Equipment:722.2
Scopus EID
2-s2.0-85114461819
Data Source
Scopus
Citation statistics
Cited Times [WOS]:0
Document TypeConference paper
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/401709
DepartmentDepartment of Electrical and Electronic Engineering
Affiliation
1.State Key Laboratory of Advanced Displays and Optoelectronics Technologies,the Hong Kong University of Science and Technology,Hong Kong
2.Department of Electrical and Electronic Engineering,Southern University of Science and Technology,China
Recommended Citation
GB/T 7714
Zhang,Ke,Liu,Yibo,Sun,Xiaowei,等. Investigation of bowing effect of 4’’ epitaxial wafer and reliability of gan-based micro-led devices[C],2021:601-604.
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