中文版 | English
Title

TEMT: A Transient Electronic-Magnetic-Thermal Coupled Simulation Framework for STT-MTJs

Author
Publication Years
2022
DOI
Source Title
ISSN
0278-0070
EISSN
1937-4151
VolumePPIssue:99Pages:1-1
Abstract
Being a promising candidate for future non-volatile memory and neuromorphic computing, Spin-Transfer-Torque Magnetic Tunnel Junction (STT-MTJ) devices are gaining substantial momentum in industrial adoption in recent years, calling for EDA support for higher modeling capabilities. However, the complex interplay of multiple physical mechanisms featured in MTJ devices impose substantial challenges to their numerical modeling. In this work, we propose a fully coupled, transient electronic-magnetic-thermal (TEMT) modelling approach for STT-MTJ devices. Aiming to be first-principle and physically holistic, TEMT combines the atomistic non-equilibrium Green’s function (NEGF) model for tunneling currents, the Landau-Lifshitz-Gilbert-Slonczewski (LLGS) equation for magnetic dynamics and the heat conduction equation (HCE) for thermal dynamics in a self-consistent manner. To alleviate computational burden, we also devise an analytical approximation approach to reduce the number of NEGF solutions in the TEMT framework, which leads to over 15X speed-up with a very mild accuracy loss. An in-depth investigation of STT-MTJ devices using the TEMT framework is conducted to demonstrate its benefits and performance.
Keywords
URL[Source Record]
Indexed By
Language
English
SUSTech Authorship
First
EI Accession Number
20223812754984
EI Keywords
Circuit simulation ; Digital storage ; Frequency modulation ; Heat conduction ; Magnetic anisotropy ; Magnetic devices ; Timing circuits ; Tunnel junctions
ESI Classification Code
Heat Transfer:641.2 ; Magnetism: Basic Concepts and Phenomena:701.2 ; Electric Network Analysis:703.1.1 ; Pulse Circuits:713.4 ; Data Storage, Equipment and Techniques:722.1 ; Mathematics:921 ; Physical Properties of Gases, Liquids and Solids:931.2
ESI Research Field
ENGINEERING
Scopus EID
2-s2.0-85137887939
Data Source
Scopus
PDF urlhttps://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9877863
Citation statistics
Cited Times [WOS]:0
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/402406
DepartmentSUSTech Institute of Microelectronics
Affiliation
School of Microelectronics, Southern University of Science and Technology, Shenzhen, China
First Author AffilicationSUSTech Institute of Microelectronics
First Author's First AffilicationSUSTech Institute of Microelectronics
Recommended Citation
GB/T 7714
Liu,Dawei,Chen,Quan. TEMT: A Transient Electronic-Magnetic-Thermal Coupled Simulation Framework for STT-MTJs[J]. IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS,2022,PP(99):1-1.
APA
Liu,Dawei,&Chen,Quan.(2022).TEMT: A Transient Electronic-Magnetic-Thermal Coupled Simulation Framework for STT-MTJs.IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS,PP(99),1-1.
MLA
Liu,Dawei,et al."TEMT: A Transient Electronic-Magnetic-Thermal Coupled Simulation Framework for STT-MTJs".IEEE TRANSACTIONS ON COMPUTER-AIDED DESIGN OF INTEGRATED CIRCUITS AND SYSTEMS PP.99(2022):1-1.
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