Temperature dependence of band shifts induced by impurity ionization in ZrTe5
The topological phase transition in ZrTe5 remains a challenge for its sensitivity to the structural parameters and carrier densities. One important issue is that the temperature dependence of the band shifts has been reported controversially. Using angle-resolved photoemission spectroscopy, we study the temperature evolution of the band structures of ZrTe5 with samples prepared by chemical vapor transport and flux methods. We find two distinct types of band shift with temperature, one monotonically moving downward to high binding energies with the increase of temperature and another one moving downward first and then reversely upward. By assuming ZrTe5 is a semiconductor with a limited amount of impurities, we analyze the temperature-induced ionization of the impurities and chemical potential shift to interpret the discrepant experimental observations. In this scenario, the discrepancies in band structures and the controversial results on temperature-dependent band shifts can be reconciled in a unified picture.
National Natural Sci-ence Foundation of China["11774421","12004123"] ; U.S. Department of Energy, Office of Basic Energy Sciences[DOE-sc0012704]
|WOS Research Area|
Materials Science ; Physics
Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
|WOS Accession No|
Cited Times [WOS]:0
|Document Type||Journal Article|
|Department||Department of Physics|
1.Department of Physics,Beijing Key Laboratory of Opto-Electronic Functional Materials & Micro-Nano Devices,Renmin University of China,Beijing,100872,China
2.Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China
3.Condensed Matter Physics and Materials Science Department,Brookhaven National Laboratory,Upton,11973,United States
4.Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing,100190,China
Song，Wenhua,Zhao，Lingxiao,Wu，Xuchuan,et al. Temperature dependence of band shifts induced by impurity ionization in ZrTe5[J]. Physical Review B,2022,106(11).
Song，Wenhua.,Zhao，Lingxiao.,Wu，Xuchuan.,Wang，Zilu.,Liu，Qingxin.,...&Wang，S. C..(2022).Temperature dependence of band shifts induced by impurity ionization in ZrTe5.Physical Review B,106(11).
Song，Wenhua,et al."Temperature dependence of band shifts induced by impurity ionization in ZrTe5".Physical Review B 106.11(2022).
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