中文版 | English
Title

Temperature dependence of band shifts induced by impurity ionization in ZrTe5

Author
Publication Years
2022-09-15
DOI
Source Title
ISSN
2469-9950
EISSN
2469-9969
Volume106Issue:11
Abstract
The topological phase transition in ZrTe5 remains a challenge for its sensitivity to the structural parameters and carrier densities. One important issue is that the temperature dependence of the band shifts has been reported controversially. Using angle-resolved photoemission spectroscopy, we study the temperature evolution of the band structures of ZrTe5 with samples prepared by chemical vapor transport and flux methods. We find two distinct types of band shift with temperature, one monotonically moving downward to high binding energies with the increase of temperature and another one moving downward first and then reversely upward. By assuming ZrTe5 is a semiconductor with a limited amount of impurities, we analyze the temperature-induced ionization of the impurities and chemical potential shift to interpret the discrepant experimental observations. In this scenario, the discrepancies in band structures and the controversial results on temperature-dependent band shifts can be reconciled in a unified picture.
URL[Source Record]
Indexed By
Language
English
Important Publications
NI Journal Papers
SUSTech Authorship
Others
Funding Project
National Natural Sci-ence Foundation of China["11774421","12004123"] ; U.S. Department of Energy, Office of Basic Energy Sciences[DOE-sc0012704]
WOS Research Area
Materials Science ; Physics
WOS Subject
Materials Science, Multidisciplinary ; Physics, Applied ; Physics, Condensed Matter
WOS Accession No
WOS:000863328500007
Publisher
ESI Research Field
PHYSICS
Scopus EID
2-s2.0-85138192669
Data Source
Scopus
Citation statistics
Cited Times [WOS]:0
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/402688
DepartmentDepartment of Physics
Affiliation
1.Department of Physics,Beijing Key Laboratory of Opto-Electronic Functional Materials & Micro-Nano Devices,Renmin University of China,Beijing,100872,China
2.Department of Physics,Southern University of Science and Technology,Shenzhen,518055,China
3.Condensed Matter Physics and Materials Science Department,Brookhaven National Laboratory,Upton,11973,United States
4.Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing,100190,China
Recommended Citation
GB/T 7714
Song,Wenhua,Zhao,Lingxiao,Wu,Xuchuan,et al. Temperature dependence of band shifts induced by impurity ionization in ZrTe5[J]. Physical Review B,2022,106(11).
APA
Song,Wenhua.,Zhao,Lingxiao.,Wu,Xuchuan.,Wang,Zilu.,Liu,Qingxin.,...&Wang,S. C..(2022).Temperature dependence of band shifts induced by impurity ionization in ZrTe5.Physical Review B,106(11).
MLA
Song,Wenhua,et al."Temperature dependence of band shifts induced by impurity ionization in ZrTe5".Physical Review B 106.11(2022).
Files in This Item:
There are no files associated with this item.
Related Services
Fulltext link
Recommend this item
Bookmark
Usage statistics
Export to Endnote
Export to Excel
Export to Csv
Altmetrics Score
Google Scholar
Similar articles in Google Scholar
[Song,Wenhua]'s Articles
[Zhao,Lingxiao]'s Articles
[Wu,Xuchuan]'s Articles
Baidu Scholar
Similar articles in Baidu Scholar
[Song,Wenhua]'s Articles
[Zhao,Lingxiao]'s Articles
[Wu,Xuchuan]'s Articles
Bing Scholar
Similar articles in Bing Scholar
[Song,Wenhua]'s Articles
[Zhao,Lingxiao]'s Articles
[Wu,Xuchuan]'s Articles
Terms of Use
No data!
Social Bookmark/Share
No comment.

Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.