中文版 | English
Title

Tandem Red Quantum-Dot Light-Emitting Diodes with External Quantum Efficiency over 34 %

Author
Corresponding AuthorChen,Shuming
DOI
Publication Years
2018
ISSN
0097-966X
EISSN
2168-0159
Source Title
Volume
49
Issue
1
Pages
977-980
Abstract
Quantum-dot light-emitting diodes (QLEDs) with tandem structures are expected to be one of the candidate technologies for next generation display due to their advantages of high efficiency and long lifetime. In this work, highly efficient tandem red QLEDs with current efficiency (CE) of 44.91 cd/A and external quantum efficiency (EQE) of 30.10 % are successfully demonstrated by using inter-connecting layer (ICL) based on Al/HATCN/MoO3. The efficiencies are further improved to 51.44 cd/A and 34.4 % by using the liquid metal EGaIn cathode. The developed ICL is stable and reproducible. The demonstrated tandem QLEDs, with high efficiency and long lifetime, would be promising candidates for next generation displays and lighting applications.
Keywords
SUSTech Authorship
First ; Corresponding
Language
English
URL[Source Record]
Scopus EID
2-s2.0-85085975642
Data Source
Scopus
Citation statistics
Cited Times [WOS]:0
Document TypeConference paper
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/402805
DepartmentDepartment of Electrical and Electronic Engineering
Affiliation
Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,Guangdong,518055,China
First Author AffilicationDepartment of Electrical and Electronic Engineering
Corresponding Author AffilicationDepartment of Electrical and Electronic Engineering
First Author's First AffilicationDepartment of Electrical and Electronic Engineering
Recommended Citation
GB/T 7714
Su,Qiang,Zhang,Heng,Xia,Fengtian,et al. Tandem Red Quantum-Dot Light-Emitting Diodes with External Quantum Efficiency over 34 %[C],2018:977-980.
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