Tandem Red Quantum-Dot Light-Emitting Diodes with External Quantum Efficiency over 34 %
Quantum-dot light-emitting diodes (QLEDs) with tandem structures are expected to be one of the candidate technologies for next generation display due to their advantages of high efficiency and long lifetime. In this work, highly efficient tandem red QLEDs with current efficiency (CE) of 44.91 cd/A and external quantum efficiency (EQE) of 30.10 % are successfully demonstrated by using inter-connecting layer (ICL) based on Al/HATCN/MoO3. The efficiencies are further improved to 51.44 cd/A and 34.4 % by using the liquid metal EGaIn cathode. The developed ICL is stable and reproducible. The demonstrated tandem QLEDs, with high efficiency and long lifetime, would be promising candidates for next generation displays and lighting applications.
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|Document Type||Conference paper|
|Department||Department of Electrical and Electronic Engineering|
Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,Guangdong,518055,China
|First Author Affilication||Department of Electrical and Electronic Engineering|
|Corresponding Author Affilication||Department of Electrical and Electronic Engineering|
|First Author's First Affilication||Department of Electrical and Electronic Engineering|
Su，Qiang,Zhang，Heng,Xia，Fengtian,et al. Tandem Red Quantum-Dot Light-Emitting Diodes with External Quantum Efficiency over 34 %[C],2018:977-980.
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