Microstructural evolution, fracture behavior and bonding mechanisms study of copper sintering on bare DBC substrate for SiC power electronics packaging

Liu, Xu1,2; Li, Shizhen2; Fan, Jiajie3; Jiang, Jing3; Liu, Yang4; Ye, Huaiyu1,2,5; Zhang, Guoqi1

2022-08-01

10.1016/j.jmrt.2022.05.122

Journal of Materials Research and Technology-JMR&T   Impact Factor & Quartile

2238-7854

2214-0697

Robust bonding of Cu quasi-nanoparticles sintering for Ag coated chip and bare copper substrate was achieved. The effect of temperature, pressure and time on the sintering bonding strength and microstructural evolution was deeply studied. 36.5 MPa shear strength was achieved when applied 5 MPa pressure. By increasing to 30 MPa, it shows the best die shear strength of 116 MPa, accomplished with a sintering temperature of 250 degrees C for 3 min. Temperature also influenced the shear strength a lot. Between 210 degrees C and 230 degrees C can already provide strength over 30 MPa. When increased to 270 degrees C, the strength was extremely enhanced to over 120 MPa. Inspection on the fracture behaviors and cross-section of sheared off samples was conducted by SEM, EDS, and XRD. It is found that low bonding performance is due to both of the incomplete burnt out of organics and incomplete Cu QNPs sintering. In addition, high bonding is account for the positive effect of pressure and temperature on promoting the necking growth, sintering networking formation, pores isolation and brittle-ductile fracture transformation. The recommended sintering profile is 250 degrees C, 3 min, 20 MPa. Finally, the feasibility for SiC MOSFET power electronics DA was verified by testing its static characteristics at both room temperature and 150 degrees C. (C) 2022 The Authors. Published by Elsevier B.V.

Sintered Cu Shear strength Microstructural evolution Failure mechanism SiC MOSFET packaging

SCI

English

Corresponding

National Key R&D Program of China[2018YFE0204600] ; Shenzhen Fundamental Research Program["JCYJ20200109140822796","K21799119"]

Materials Science ; Metallurgy & Metallurgical Engineering

Materials Science, Multidisciplinary ; Metallurgy & Metallurgical Engineering

WOS:000861380100003

ELSEVIER

Web of Science

1.Delft Univ Technol, Dept Microelect, NL-2628 CD Delft, Netherlands
2.Southern Univ Sci & Technol, Sch Microelect, Shenzhen 518055, Peoples R China
3.Fudan Univ, Acad Engn & Technol, Shanghai 200433, Peoples R China
4.Harbin Univ Sci & Technol, Sch Mat Sci & Engn, Harbin 150040, Peoples R China
5.Chongqing Univ, Coll Optoelect Engn, Key Lab Optoelect Technol & Syst, Educ Minist China, Chongqing 400044, Peoples R China

Liu, Xu,Li, Shizhen,Fan, Jiajie,et al. Microstructural evolution, fracture behavior and bonding mechanisms study of copper sintering on bare DBC substrate for SiC power electronics packaging[J]. Journal of Materials Research and Technology-JMR&T,2022,19.

Liu, Xu.,Li, Shizhen.,Fan, Jiajie.,Jiang, Jing.,Liu, Yang.,...&Zhang, Guoqi.(2022).Microstructural evolution, fracture behavior and bonding mechanisms study of copper sintering on bare DBC substrate for SiC power electronics packaging.Journal of Materials Research and Technology-JMR&T,19.

Liu, Xu,et al."Microstructural evolution, fracture behavior and bonding mechanisms study of copper sintering on bare DBC substrate for SiC power electronics packaging".Journal of Materials Research and Technology-JMR&T 19(2022).