Dually Modified Wide-Bandgap Perovskites by Phenylethylammonium Acetate toward Highly Efficient Solar Cells with Low Photovoltage Loss

Chen, Jiabang1,2,3,4; Wang, Deng1,2,5; Chen, Shi9; Hu, Hang1,2; Li, Yang1,2; Huang, Yulan1,2; Zhang, Zhuoqiong6,7; Jiang, Zhengyan1,2; Xu, Jiamin1,2; Sun, Xiyu1,2; So, Shu Kong6,7; Peng, Yuanjun8; Wang, Xingzhu1,2,8,10; Zhu, Xunjin3,4; Xu, Baomin1,2,11,12

2022-09-01

10.1021/acsami.2c10928

ACS Applied Materials & Interfaces   Impact Factor & Quartile

1944-8244

1944-8252

Wide-bandgap perovskites as a class of promising top-cell materials have shown great promise in constructing efficient perovskite-based tandem solar cells, but their intrinsic relatively low radiative efficiency results in a large open-circuit voltage (VOC) deficit and thereby limits the whole device performance. Reducing film flaws or optimizing interfacial energy level alignments in wide-bandgap perovskite devices can efficiently inhibit nonradiative recombination to boost device VOC and efficiency. However, the simultaneous regulation on both sides and their underlying mechanism are less explored. Herein, a bifunctional modification approach is proposed to optimize the wide-bandgap perovskite surface with an ultrathin layer of phenylethylammonium acetate (PEAAc) to synchronously decrease the surface imperfection and mitigate the interfacial energy barrier. This treatment effectively heals under-coordinated surface defects through the formation of chemical interaction between the perovskite and PEAAc, bringing about a much slower charge trapping process and dramatically decreasing nonradiative recombination losses. Meanwhile, the passivation-induced upshifted Fermi level of the perovskite contributes to accelerated electron extraction and larger Fermi-level splitting under illumination. Consequently, the PEAAc-modified wide-bandgap (1.68 eV) device achieves an optimal efficiency of 20.66% with a high VOC of 1.25 V, among the highest reported VOC values for wide-bandgap perovskite devices, enormously outperforming that (18.86% and 1.18 V) of the device without passivation. In addition, the radiative limit of VOC for both cells is determined to be 1.42 V, delivering nonradiative recombination losses of 0.24 and 0.17 V for the control and PEAAc-modified devices, respectively. These results highlight the significance of the bifunctional modification strategy in achieving high-performance wide-bandgap perovskite devices.

wide-bandgap perovskite perovskite solar cells surface modification interfacial energy barrier nonradiative recombination low photovoltage loss

SCI

English

First ; Corresponding

National Key Research and Development Program of China["2021YFB3800100","2021YFB3800101"] ; National Natural Science Foundation of China["62004089","U19A2089"] ; Guangdong Basic and Applied Basic Research Foundation["2022A1515011218","2019B1515120083"] ; Shenzhen Science and Technology Program["JCYJ 2 0 1 9 0 8 0 9 1 5 0 8 1 1 5 0 4","JCYJ20200109141014474"] ; Shenzhen Development and Reform Committee[2019-126] ; Innovation and Entrepreneurship Training program for College students[S202014325010] ; Guangdong-Hong Kong-Macao Joint Laboratory[2019B121205001] ; General Research Fund[HKBU 12304320] ; Initiation Grant for Faculty Niche Research Areas (IG-FNRA)[(2020/21) -RC-FNRA-IG/20-21/SCI/06] ; Special Zone Support Program for Outstanding Talents of Henan University[CX3050A0970530]

Science & Technology - Other Topics ; Materials Science

Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary

WOS:000861904900001

AMER CHEMICAL SOC

Web of Science

1.Southern Univ Sci & Technol, Dept Mat Sci & Engn, Shenzhen 518055, Guangdong Provi, Peoples R China
2.Southern Univ Sci & Technol, Shenzhen Engn Res & Dev Ctr Flexible Solar Cells, Shenzhen 518055, Guangdong Provi, Peoples R China
3.Hong Kong Baptist Univ, Dept Chem, Kowloon Tong, Hong Kong 999077, Peoples R China
4.Hong Kong Baptist Univ, Inst Mol Funct Mat, Kowloon Tong, Hong Kong 999077, Peoples R China
5.City Univ Hong Kong, Dept Mat Sci & Engn, Kowloon, Hong Kong 999077, Peoples R China
6.Hong Kong Baptist Univ, Dept Phys, Kowloon Tong, Hong Kong 999077, Peoples R China
7.Hong Kong Baptist Univ, Inst Adv Mat, Kowloon Tong, Hong Kong 999077, Peoples R China
8.Shenzhen Putai Technol Co Ltd, Shenzhen 518110, Peoples R China
9.Henan Univ, Henan Key Lab Photovolta Mat, Kaifeng 475004, Peoples R China
10.Southern Univ Sci & Technol, SUS Tech Acad Adv Interdisciplinary Studies, Shenzhen 518055, Guangdong Provi, Peoples R China
11.Southern Univ Sci & Technol, Guangdong Hong Kong Macao Joint Lab Photon Thermal, Hong Kong 518055, Peoples R China
12.Southern Univ Sci & Technol, Key Lab Energy Convers & Storage Technol, Minist Educ, Shenzhen 518055, Peoples R China

Chen, Jiabang,Wang, Deng,Chen, Shi,et al. Dually Modified Wide-Bandgap Perovskites by Phenylethylammonium Acetate toward Highly Efficient Solar Cells with Low Photovoltage Loss[J]. ACS Applied Materials & Interfaces,2022.

Chen, Jiabang.,Wang, Deng.,Chen, Shi.,Hu, Hang.,Li, Yang.,...&Xu, Baomin.(2022).Dually Modified Wide-Bandgap Perovskites by Phenylethylammonium Acetate toward Highly Efficient Solar Cells with Low Photovoltage Loss.ACS Applied Materials & Interfaces.

Chen, Jiabang,et al."Dually Modified Wide-Bandgap Perovskites by Phenylethylammonium Acetate toward Highly Efficient Solar Cells with Low Photovoltage Loss".ACS Applied Materials & Interfaces (2022).