| Title | Large unsaturated magnetoresistance of 2D magnetic semiconductor Fe-SnS2 homojunction |
| Author | |
| Corresponding Author | Liao, Zhimin; Wei, Zhongming |
| Publication Years | 2022-09-01
|
| DOI | |
| Source Title | |
| ISSN | 1674-4926
|
| Volume | 43Issue:9 |
| Abstract | A magnetic semiconductor whose electronic charge and spin can be regulated together will be an important component of future spintronic devices. Here, we construct a two-dimensional (2D) Fe doped SnS2 (Fe-SnS2) homogeneous junction and investigate its electromagnetic transport feature. The Fe-SnS2 homojunction device showed large positive and unsaturated magnetoresistance (MR) of 1800% in the parallel magnetic field and 600% in the vertical magnetic field, indicating an obvious anisotropic MR feature. In contrast, The MR of Fe-SnS2 homojunction is much larger than the pure diamagnetic SnS2 and most 2D materials. The application of a gate voltage can regulate the MR effect of Fe-SnS2 homojunction devices. Moreover, the stability of Fe-SnS2 in air has great application potential. Our Fe-SnS2 homojunction has a significant potential in future magnetic memory applications. |
| Keywords | |
| URL | [Source Record] |
| Indexed By | |
| Language | English
|
| SUSTech Authorship | Others
|
| Funding Project | National Key Research and Development Program of China[2017YFA0207500]
; National Natural Science Foundation of China[62125404]
; Strategic Priority Research Program of Chinese Academy of Sciences[XDB43000000]
|
| WOS Research Area | Physics
|
| WOS Subject | Physics, Condensed Matter
|
| WOS Accession No | WOS:000859471000001
|
| Publisher | |
| Data Source | Web of Science
|
| Citation statistics |
Cited Times [WOS]:2
|
| Document Type | Journal Article |
| Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/406063 |
| Department | Institute for Quantum Science and Engineering |
| Affiliation | 1.Chinese Acad Sci, Inst Semicond, State Key Lab Superlattices & Microstruct, Beijing 100083, Peoples R China 2.Univ Chinese Acad Sci, Ctr Mat Sci & Optoelect Engn, Beijing 100049, Peoples R China 3.Peking Univ, Sch Phys, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China 4.Peking Univ, Sch Phys, Frontiers Sci Ctr Nanooptoelect, Beijing 100871, Peoples R China 5.Southern Univ Sci & Technol, Shenzhen Inst Quantum Sci & Engn, Shenzhen 518055, Peoples R China 6.Hunan Univ, Sch Phys & Elect, Dept Appl Phys, Hunan Key Lab Two Dimens Mat, Changsha 410082, Peoples R China |
| First Author Affilication | Institute for Quantum Science and Engineering |
| Recommended Citation GB/T 7714 |
Fang, Jingzhi,Song, Huading,Li, Bo,et al. Large unsaturated magnetoresistance of 2D magnetic semiconductor Fe-SnS2 homojunction[J]. Journal of Semiconductors,2022,43(9).
|
| APA |
Fang, Jingzhi.,Song, Huading.,Li, Bo.,Zhou, Ziqi.,Yang, Juehan.,...&Wei, Zhongming.(2022).Large unsaturated magnetoresistance of 2D magnetic semiconductor Fe-SnS2 homojunction.Journal of Semiconductors,43(9).
|
| MLA |
Fang, Jingzhi,et al."Large unsaturated magnetoresistance of 2D magnetic semiconductor Fe-SnS2 homojunction".Journal of Semiconductors 43.9(2022).
|
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