| Title | Gate Leakage and Reliability of GaN p-Channel FET with SiNx/GaON Staggered Gate Stack |
| Author | |
| Publication Years | 2022
|
| DOI | |
| Source Title | |
| ISSN | 1558-0563
|
| Volume | PPIssue:99Pages:1-1 |
| Keywords | |
| URL | [Source Record] |
| SUSTech Authorship | Others
|
| Data Source | IEEE
|
| PDF url | https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=9889687 |
| Citation statistics |
Cited Times [WOS]:1
|
| Document Type | Journal Article |
| Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/406108 |
| Department | Department of Electrical and Electronic Engineering |
| Affiliation | 1.Department of Electronic and Computer Engineering, The Hong Kong University of Science and Technology, Hong Kong, China 2.Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, China |
| Recommended Citation GB/T 7714 |
Li Zhang,Zheyang Zheng,Wenjie Song,et al. Gate Leakage and Reliability of GaN p-Channel FET with SiNx/GaON Staggered Gate Stack[J]. IEEE Electron Device Letters,2022,PP(99):1-1.
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| APA |
Li Zhang.,Zheyang Zheng.,Wenjie Song.,Tao Chen.,Sirui Feng.,...&Kevin J. Chen.(2022).Gate Leakage and Reliability of GaN p-Channel FET with SiNx/GaON Staggered Gate Stack.IEEE Electron Device Letters,PP(99),1-1.
|
| MLA |
Li Zhang,et al."Gate Leakage and Reliability of GaN p-Channel FET with SiNx/GaON Staggered Gate Stack".IEEE Electron Device Letters PP.99(2022):1-1.
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| Files in This Item: | There are no files associated with this item. | |||||
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