Resistive switching memory based on polyvinyl alcohol-graphene oxide hybrid material for the visual perception nervous system
Resistive random-access memory (RRAM) is a new memory technology that can not only realize high-density storage, but also can simulate the neural synapse for use in artificial intelligence applications. In this study, we propose an RRAM device that shows competitive resistive memory characteristics and can similarly be used as a synapse in simulation of the human visual perception nervous system. First, we demonstrate that the polyvinyl alcohol-graphene oxide (PVA@GO) hybrid material-based RRAM device offers competitive resistive memory characteristics, including long retention capability, high durability, repeatability, and mechanical flexibility. Second, we integrate the RRAM (as the artificial synapse) with a light-sensitive electronic component (a photoreceptor cell) to construct an artificial visual perception system, and realize effective emulation of light perception and conversion of light signals into synaptic signals. Under light irradiation at 532 nm, a range of versatile synaptic functions, including short-term plasticity (STP), long-term plasticity (LTP), and paired pulse facilitation (PPF), was imitated. This work provides valuable insight into the development path for next-generation high-density data storage technology, and also offers a new way to imitate the human visual neural network for multi-functional humanoid robots.
 ;  ;  ;  ; [2017YFA0700202] ; [JCYJ20170412154447469] ; [2019XRG-0056]
|WOS Research Area|
Materials Science, Multidisciplinary
|WOS Accession No|
Cited Times [WOS]:1
|Document Type||Journal Article|
|Department||Department of Electrical and Electronic Engineering|
1.College of Electrical Engineering,North China University of Water Resources and Electric Power,Zhengzhou,450045,China
2.Key Laboratory of Opto-Electronics Information Technology (Tianjin University),Ministry of Education,School of Precision Instruments and Opto-Electronics Engineering,Tianjin University,Tianjin,300072,China
3.Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China
Chen，Zhiliang,Zhang，Yating,Yu，Yu,et al. Resistive switching memory based on polyvinyl alcohol-graphene oxide hybrid material for the visual perception nervous system[J]. Materials and Design,2022,223.
Chen，Zhiliang.,Zhang，Yating.,Yu，Yu.,Li，Yifan.,Li，Qingyan.,...&Yao，Jianquan.(2022).Resistive switching memory based on polyvinyl alcohol-graphene oxide hybrid material for the visual perception nervous system.Materials and Design,223.
Chen，Zhiliang,et al."Resistive switching memory based on polyvinyl alcohol-graphene oxide hybrid material for the visual perception nervous system".Materials and Design 223(2022).
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