中文版 | English
Title

Resistive switching memory based on polyvinyl alcohol-graphene oxide hybrid material for the visual perception nervous system

Author
Corresponding AuthorZhang,Yating
Publication Years
2022-11-01
DOI
Source Title
ISSN
0264-1275
EISSN
1873-4197
Volume223
Abstract
Resistive random-access memory (RRAM) is a new memory technology that can not only realize high-density storage, but also can simulate the neural synapse for use in artificial intelligence applications. In this study, we propose an RRAM device that shows competitive resistive memory characteristics and can similarly be used as a synapse in simulation of the human visual perception nervous system. First, we demonstrate that the polyvinyl alcohol-graphene oxide (PVA@GO) hybrid material-based RRAM device offers competitive resistive memory characteristics, including long retention capability, high durability, repeatability, and mechanical flexibility. Second, we integrate the RRAM (as the artificial synapse) with a light-sensitive electronic component (a photoreceptor cell) to construct an artificial visual perception system, and realize effective emulation of light perception and conversion of light signals into synaptic signals. Under light irradiation at 532 nm, a range of versatile synaptic functions, including short-term plasticity (STP), long-term plasticity (LTP), and paired pulse facilitation (PPF), was imitated. This work provides valuable insight into the development path for next-generation high-density data storage technology, and also offers a new way to imitate the human visual neural network for multi-functional humanoid robots.
Keywords
URL[Source Record]
Indexed By
Language
English
SUSTech Authorship
Others
Funding Project
[61675147] ; [61605141] ; [61735010] ; [91838301] ; [2017YFA0700202] ; [JCYJ20170412154447469] ; [2019XRG-0056]
WOS Research Area
Materials Science
WOS Subject
Materials Science, Multidisciplinary
WOS Accession No
WOS:000888426700006
Publisher
Scopus EID
2-s2.0-85139451985
Data Source
Scopus
Citation statistics
Cited Times [WOS]:1
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/406170
DepartmentDepartment of Electrical and Electronic Engineering
Affiliation
1.College of Electrical Engineering,North China University of Water Resources and Electric Power,Zhengzhou,450045,China
2.Key Laboratory of Opto-Electronics Information Technology (Tianjin University),Ministry of Education,School of Precision Instruments and Opto-Electronics Engineering,Tianjin University,Tianjin,300072,China
3.Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China
Recommended Citation
GB/T 7714
Chen,Zhiliang,Zhang,Yating,Yu,Yu,et al. Resistive switching memory based on polyvinyl alcohol-graphene oxide hybrid material for the visual perception nervous system[J]. Materials and Design,2022,223.
APA
Chen,Zhiliang.,Zhang,Yating.,Yu,Yu.,Li,Yifan.,Li,Qingyan.,...&Yao,Jianquan.(2022).Resistive switching memory based on polyvinyl alcohol-graphene oxide hybrid material for the visual perception nervous system.Materials and Design,223.
MLA
Chen,Zhiliang,et al."Resistive switching memory based on polyvinyl alcohol-graphene oxide hybrid material for the visual perception nervous system".Materials and Design 223(2022).
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