| Title | Inverted Quantum Dot Light-Emitting Diodes with MgZnO Modified Electron Transport Layer |
| Author | |
| DOI | |
| Publication Years | 2017
|
| ISSN | 0097-966X
|
| EISSN | 2168-0159
|
| Source Title | |
| Volume | 48
|
| Issue | 1
|
| Pages | 1699-1701
|
| Abstract | Inverted quantum-dot light-emitting diodes (QLEDs) with high efficiency are demonstrated by utilizing MgZnO modified electron transport layers (ETLs). MgZnO nanoparticles (NPs) with thickness of 10 nm are inserted between ZnO and quantum dots, which reduces the injection of electrons and thus improves the balance of charge injection. Moreover, exciton quenching by ZnO nanoparticles is largely alleviated. Consequently, maximum current efficiency of 11.5 cd/A is achieved and a 36% improvement of external quantum efficiency (EQE) is also obtained in comparison with conventional devices without MgZnO modification layer. |
| Keywords | |
| SUSTech Authorship | Others
|
| Language | English
|
| URL | [Source Record] |
| Scopus EID | 2-s2.0-85077789805
|
| Data Source | Scopus
|
| Citation statistics |
Cited Times [WOS]:0
|
| Document Type | Conference paper |
| Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/406309 |
| Department | Department of Electrical and Electronic Engineering |
| Affiliation | 1.Institute of Microelectronics,Peking University,Beijing,China 2.Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,China |
| Recommended Citation GB/T 7714 |
Sun，Yizhe,Peng，Huiren,Chen，Shuming,et al. Inverted Quantum Dot Light-Emitting Diodes with MgZnO Modified Electron Transport Layer[C],2017:1699-1701.
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