| Title | Parylene/Al2O3 Double Layer Passivated Amorphous InGaZnO Thin-Film Transistors |
| Author | |
| DOI | |
| Publication Years | 2017
|
| ISSN | 0097-966X
|
| EISSN | 2168-0159
|
| Source Title | |
| Volume | 48
|
| Issue | 1
|
| Pages | 1258-1261
|
| Abstract | Amorphous InGaZnO thin-film transistors (a-IGZO TFTs) passivated by parylene/AlO double layer are fabricated. The parylene layer prevents the channel layer from ion bombardment during AlO sputtering. AlO blocks O and water effectively. It is shown that a-IGZO TFTs with the proposed passivation are stable in the ambient atmosphere. |
| Keywords | |
| SUSTech Authorship | Others
|
| Language | English
|
| URL | [Source Record] |
| Scopus EID | 2-s2.0-85043528559
|
| Data Source | Scopus
|
| Citation statistics |
Cited Times [WOS]:0
|
| Document Type | Conference paper |
| Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/406311 |
| Department | Department of Electrical and Electronic Engineering |
| Affiliation | 1.Institute of Microelectronics,Peking University,Beijing,China 2.School of Electronic and Computer Engineering,Peking University,Shenzhen,China 3.Department of Electrical and Electronic Engineering,South University of Science and Technology of China,Shenzhen,China |
| Recommended Citation GB/T 7714 |
Zhou，Xiaoliang,Wang，Gang,Shao，Yang,et al. Parylene/Al2O3 Double Layer Passivated Amorphous InGaZnO Thin-Film Transistors[C],2017:1258-1261.
|
| Files in This Item: | There are no files associated with this item. | |||||
Items in the repository are protected by copyright, with all rights reserved, unless otherwise indicated.
Edit Comment