Title | Revealing the Hidden Mechanism of Enhanced Responsivity of Doped p-i-n Perovskite Photodiodes via Coupled Opto-Electronic Model |
Author | |
Corresponding Author | Wu, Dan |
Publication Years | 2022-10-01
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DOI | |
Source Title | |
EISSN | 1420-3049
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Volume | 27Issue:19 |
Abstract | Organic-inorganic halide perovskites have demonstrated preeminent optoelectronic performance in recent years due to their unique material properties, and have shown great potential in the field of photodetectors. In this study, a coupled opto-electronic model is constructed to reveal the hidden mechanism of enhancing the performance of perovskite photodetectors that are suitable for both inverted and regular structure doped p-i-n perovskite photodiodes. Upon illumination, the generation rate of photogenerated carriers is calculated followed by carrier density distribution, which serves as a coupled joint to further analyze the recombination rate, electric field strength, and current density of carriers under different doping types and densities. Moreover, experiments were carried out in which the doping types and densities of the active layer were regulated by changing the precursor ratios. With optimal doping conditions, the inverted and regular perovskite photodiodes achieved an external quantum efficiency of 74.83% and 73.36%, and a responsivity of 0.417 and 0.404 A/W, respectively. The constructed coupled opto-electronic model reveals the hidden mechanism and along with the doping strategy, this study provides important guidance for further analysis and improvement of perovskite-based photodiodes. |
Keywords | |
URL | [Source Record] |
Indexed By | |
Language | English
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SUSTech Authorship | Others
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Funding Project | Shenzhen Innovation Project[JCYJ20190809152411655]
; National Natural Science Foundation of China["61905107","62150610496"]
; National Key R&D Program of China[2019YFB1704600]
; Guangdong Basic and Applied Basic Research Foundation[2022A1515011071]
; Education Department of Guangdong Province[2021KCXTD045]
; Natural Science Foundation of Top Talent of Shenzhen Technology University[GDRC202110]
; Instrument development projects of Shenzhen Technology University[JSZZ202201019]
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WOS Research Area | Biochemistry & Molecular Biology
; Chemistry
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WOS Subject | Biochemistry & Molecular Biology
; Chemistry, Multidisciplinary
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WOS Accession No | WOS:000868056000001
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Publisher | |
ESI Research Field | CHEMISTRY
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Data Source | Web of Science
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Citation statistics |
Cited Times [WOS]:0
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Document Type | Journal Article |
Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/406517 |
Department | Department of Electrical and Electronic Engineering |
Affiliation | 1.Shenzhen Technol Univ, Coll New Mat & New Energies, Shenzhen 518118, Peoples R China 2.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China |
Recommended Citation GB/T 7714 |
Wu, Dan,Zhang, Hechun,Liu, Haochen,et al. Revealing the Hidden Mechanism of Enhanced Responsivity of Doped p-i-n Perovskite Photodiodes via Coupled Opto-Electronic Model[J]. MOLECULES,2022,27(19).
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APA |
Wu, Dan.,Zhang, Hechun.,Liu, Haochen.,Li, Wenhui.,Xiao, Xiangtian.,...&Wang, Kai.(2022).Revealing the Hidden Mechanism of Enhanced Responsivity of Doped p-i-n Perovskite Photodiodes via Coupled Opto-Electronic Model.MOLECULES,27(19).
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MLA |
Wu, Dan,et al."Revealing the Hidden Mechanism of Enhanced Responsivity of Doped p-i-n Perovskite Photodiodes via Coupled Opto-Electronic Model".MOLECULES 27.19(2022).
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