中文版 | English
Title

On the voltage behavior of quantum dot light-emitting diode

Author
Corresponding AuthorSun, Xiao Wei
Publication Years
2022-10-01
DOI
Source Title
ISSN
1998-0124
EISSN
1998-0000
Abstract
The origin of the efficiency drop of quantum dot light-emitting diode (QLED) under consecutive voltage sweeps is still a puzzle. In this work, we report the voltage sweep behavior of QLED. We observed the efficiency drop of red QLED with ZnMgO electron transport layer (ETL) under consecutive voltage sweeps. In contrast, the efficiency increases for ZnO ETL device. By analyzing the electrical characteristics of both devices and surface traps of ZnMgO and ZnO nanoparticles, we found the efficiency drop of ZnMgO device is related to the hole leakage mediated by trap state on ZnMgO nanoparticles. For ZnO device, the efficiency raise is due to suppressed electron leakage. The hole leakage also causes rapid lifetime degradation of ZnMgO device. However, the efficiency and lifetime degradation of ZnMgO device can be eliminated with shelf aging. Our work reveals the distinct voltage sweep behavior of QLED based on different ETLs and may help to understand the lifetime degradation mechanism in QLED.
Keywords
URL[Source Record]
Indexed By
Language
English
SUSTech Authorship
First ; Corresponding
Funding Project
Key-Area Research and Development Program of Guangdong Province["20198010925001","2019B010924001"] ; Guangdong University Key Laboratory for Advanced Quantum Dot Displays and Lighting[2017KSYS007]
WOS Research Area
Chemistry ; Science & Technology - Other Topics ; Materials Science ; Physics
WOS Subject
Chemistry, Physical ; Nanoscience & Nanotechnology ; Materials Science, Multidisciplinary ; Physics, Applied
WOS Accession No
WOS:000866366100006
Publisher
Data Source
Web of Science
Citation statistics
Cited Times [WOS]:0
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/406541
DepartmentDepartment of Electrical and Electronic Engineering
Affiliation
1.Southern Univ Sci & Technol, Inst Nanosci & Applicat, Shenzhen 518055, Peoples R China
2.Southern Univ Sci & Technol, Guangdong Hong Kong Macao Joint Lab Photon Therma, Shenzhen Key Lab Adv Quantum Dot Displays & Light, Key Lab Energy Convers & Storage Technol,Minist E, Shenzhen 518055, Peoples R China
3.Southern Univ Sci & Technol, Dept Elect & Elect Engn, Shenzhen 518055, Peoples R China
First Author AffilicationSouthern University of Science and Technology;  Department of Electrical and Electronic Engineering
Corresponding Author AffilicationSouthern University of Science and Technology;  Department of Electrical and Electronic Engineering
First Author's First AffilicationSouthern University of Science and Technology
Recommended Citation
GB/T 7714
Qu, Xiangwei,Ma, Jingrui,Liu, Pai,et al. On the voltage behavior of quantum dot light-emitting diode[J]. Nano Research,2022.
APA
Qu, Xiangwei,Ma, Jingrui,Liu, Pai,Wang, Kai,&Sun, Xiao Wei.(2022).On the voltage behavior of quantum dot light-emitting diode.Nano Research.
MLA
Qu, Xiangwei,et al."On the voltage behavior of quantum dot light-emitting diode".Nano Research (2022).
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