Second-order associative memory circuit hardware implemented by the evolution from battery-like capacitance to resistive switching memory

Zhou，Guangdong1; Ji，Xiaoye2; Li，Jie3; Zhou，Feichi3; Dong，Zhekang2; Yan，Bingtao1; Sun，Bai4; Wang，Wenhua1; Hu，Xiaofang1; Song，Qunliang1; Wang，Lidan1; Duan，Shukai1

2022-10-21

10.1016/j.isci.2022.105240

iScience   Impact Factor & Quartile

2589-0042

Memristor-based Pavlov associative memory circuit presented today only realizes the simple condition reflex process. The secondary condition reflex endows the simple condition reflex process with more bionic, but it is only demonstrated in design and involves the large number of redundant circuits. A FeO-based memristor exhibits an evolution process from battery-like capacitance (BLC) state to resistive switching (RS) memory as the I-V sweeping increase. The BLC is triggered by the active metal ion and hydroxide ion originated from water molecule splitting at different interfaces, while the RS memory behavior is dominated by the diffusion and migration of ion in the FeO switching function layer. The evolution processes share the nearly same biophysical mechanism with the second-order conditioning. It enables a hardware-implemented second-order associative memory circuit to be feasible and simple. This work provides a novel path to realize the associative memory circuit with the second-order conditioning at hardware level.

Hardware architecture Memory structure

English

Corresponding

Natural Science Foundation of Chongqing[cstc2020jcyj-msxm X0648];Fundamental Research Funds for the Central Universities[SWU020019];Natural Science Foundation of Guizhou Province[[2020]1Y024];

2-s2.0-85139733554

Scopus

1.College of Artificial Intelligence,School of Materials and Energy,Southwest University,Chongqing,400715,China
2.College of Electrical Engineering,Zhejiang University,Hangzhou,310027,China
3.Shenzhen-Hong Kong College of Microelectronics,Southern University of Science and Technology,Shenzhen,518055,China
4.Department of Mechanics and Mechatronics Engineering,Centre for Advanced Materials Joining,Waterloo Institute for Nanotechnology,University of Waterloo,Waterloo,N2L 3G1,Canada

Zhou，Guangdong,Ji，Xiaoye,Li，Jie,et al. Second-order associative memory circuit hardware implemented by the evolution from battery-like capacitance to resistive switching memory[J]. iScience,2022,25(10).

Zhou，Guangdong.,Ji，Xiaoye.,Li，Jie.,Zhou，Feichi.,Dong，Zhekang.,...&Duan，Shukai.(2022).Second-order associative memory circuit hardware implemented by the evolution from battery-like capacitance to resistive switching memory.iScience,25(10).

Zhou，Guangdong,et al."Second-order associative memory circuit hardware implemented by the evolution from battery-like capacitance to resistive switching memory".iScience 25.10(2022).