| Title | Efficient InP Green Quantum-Dot Light-Emitting Diodes Based on Organic Electron Transport Layer |
| Author | |
| Corresponding Author | Chen，Shuming |
| Publication Years | 2022
|
| DOI | |
| Source Title | |
| ISSN | 2195-1071
|
| EISSN | 2195-1071
|
| Abstract | ZnMgO thin film is commonly used as an electron transport layer (ETL) in quantum-dot light-emitting diodes (QLEDs); however, it often induces the problems of interface exciton quenching and electron over-injection in the devices. Herein, an organic molecule 2,4,6-tris(3-(diphenylphosphoryl)phenyl)-1,3,5-triazine (PO-T2T) is investigated as a ETL material for InP green QLEDs. Due to the high injection barrier and moderate electron mobility, the PO-T2T can prevent electron over-injection and accumulation in the InP QLEDs. Besides, with the organic ETL, the interfacial exciton quenching is effectively suppressed. By depositing the PO-T2T using a solution-assisted evaporation method, efficient InP green QLEDs are achieved, which exhibit a maximum external quantum efficiency of 15.0% and a luminance of 10 010 cd m, corresponding to 211% and 237% enhancements, respectively, compared to 7.1% and 4207 cd m of the devices with ZnMgO ETL. |
| Keywords | |
| URL | [Source Record] |
| Indexed By | |
| Language | English
|
| SUSTech Authorship | First
; Corresponding
|
| Funding Project | National Natural Science Foundation of China[62174075]
; Shenzhen Science and Technology Program[JCYJ20210324105400002]
; Guangdong University Research Program[2020ZDZX3062]
|
| WOS Research Area | Materials Science
; Optics
|
| WOS Subject | Materials Science, Multidisciplinary
; Optics
|
| WOS Accession No | WOS:000869293800001
|
| Publisher | |
| Scopus EID | 2-s2.0-85139967192
|
| Data Source | Scopus
|
| Citation statistics |
Cited Times [WOS]:1
|
| Document Type | Journal Article |
| Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/406595 |
| Department | Department of Electrical and Electronic Engineering |
| Affiliation | 1.Department of Electrical and Electronic Engineering,Southern University of Science and Technology,Shenzhen,518055,China 2.School of Semiconductor Science and Technology,South China Normal University,Guangzhou,510631,China 3.College of Intelligent Manufacturing,Guangzhou Panyu Polytechnic,Guangzhou,511483,China |
| First Author Affilication | Department of Electrical and Electronic Engineering |
| Corresponding Author Affilication | Department of Electrical and Electronic Engineering |
| First Author's First Affilication | Department of Electrical and Electronic Engineering |
| Recommended Citation GB/T 7714 |
Gao，Peili,Zhang，Yong,Qi，Pan,et al. Efficient InP Green Quantum-Dot Light-Emitting Diodes Based on Organic Electron Transport Layer[J]. Advanced Optical Materials,2022.
|
| APA |
Gao，Peili,Zhang，Yong,Qi，Pan,&Chen，Shuming.(2022).Efficient InP Green Quantum-Dot Light-Emitting Diodes Based on Organic Electron Transport Layer.Advanced Optical Materials.
|
| MLA |
Gao，Peili,et al."Efficient InP Green Quantum-Dot Light-Emitting Diodes Based on Organic Electron Transport Layer".Advanced Optical Materials (2022).
|
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