Fabrication of CdSe/ZnS Quantum Dot Color Filters via Photolithography Process
|Corresponding Author||Wang，Kai; Sun，Xiao Wei|
Quantum dots color filter (QDCF) is potential to be a game-changer for display and micro LED industry. In this paper, highly fluorescent QDCF have been prepared by changing surface active ligand of CdSe@ZnS to nonreactive ligand for photolithographic patterning. The quantum dots (QDs) with inactivated ligand avoids chemical reaction during the photolithography process. The 4 μm thickness QDCF with 28.8% (red) absolute PL quantum yield ( λmax of 630.16 nm) has been achieved after the photolithograpy process, while the QDs with surface active sites failed to form a patterned film. This may be due to the coordination of activated bonds with photoresist and the occurrence of complexation reaction.
Cited Times [WOS]:0
|Document Type||Conference paper|
|Department||Department of Electrical and Electronic Engineering|
1.Department of Electrical & Electronic Engineering,Southern University of Science and Technology,Shenzhen,China
|Corresponding Author Affilication||Department of Electrical and Electronic Engineering|
Zhao，Bingxin,Lu，Rui,Hao，Junjie,et al. Fabrication of CdSe/ZnS Quantum Dot Color Filters via Photolithography Process[C],2018.
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