Title | Fabrication of CdSe/ZnS Quantum Dot Color Filters via Photolithography Process |
Author | |
Corresponding Author | Wang,Kai; Sun,Xiao Wei |
DOI | |
Publication Years | 2018
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ISSN | 0097-966X
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EISSN | 2168-0159
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Source Title | |
Volume | 49
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Issue | S1
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Abstract | Quantum dots color filter (QDCF) is potential to be a game-changer for display and micro LED industry. In this paper, highly fluorescent QDCF have been prepared by changing surface active ligand of CdSe@ZnS to nonreactive ligand for photolithographic patterning. The quantum dots (QDs) with inactivated ligand avoids chemical reaction during the photolithography process. The 4 μm thickness QDCF with 28.8% (red) absolute PL quantum yield ( λmax of 630.16 nm) has been achieved after the photolithograpy process, while the QDs with surface active sites failed to form a patterned film. This may be due to the coordination of activated bonds with photoresist and the occurrence of complexation reaction. |
Keywords | |
SUSTech Authorship | Corresponding
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Language | English
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URL | [Source Record] |
Scopus EID | 2-s2.0-85121546210
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Data Source | Scopus
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Citation statistics |
Cited Times [WOS]:0
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Document Type | Conference paper |
Identifier | http://kc.sustech.edu.cn/handle/2SGJ60CL/406936 |
Department | Department of Electrical and Electronic Engineering |
Affiliation | 1.Department of Electrical & Electronic Engineering,Southern University of Science and Technology,Shenzhen,China 2.Tsinghua University,Beijing,China |
Corresponding Author Affilication | Department of Electrical and Electronic Engineering |
Recommended Citation GB/T 7714 |
Zhao,Bingxin,Lu,Rui,Hao,Junjie,et al. Fabrication of CdSe/ZnS Quantum Dot Color Filters via Photolithography Process[C],2018.
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