High-Performance UV-Vis Broad-Spectra Photodetector Based on a β-Ga2O3/Au/MAPbBr3Sandwich Structure

Gong，Weiqiang1; Yan，Jun1; Gao，Feng1; Ding，Sunan2; He，Gaohang3; Li，Lin1

2022

10.1021/acsami.2c11681

ACS Applied Materials & Interfaces   Impact Factor & Quartile

1944-8244

1944-8252

The UV-vis photodetector (PD), a detector that can simultaneously detect light in the ultraviolet region and the visible region, has a wide range of applications in military and civilian fields. Currently, it is very difficult to obtain good detection performance in the UV region (especially in the solar-blind range) like in the visible region with most UV-vis PDs. This severely affects the practical application of UV-vis broad-spectra PDs. Here, a simple sandwich structure PD (SSPD) composed of β-Ga2O3, Au electrodes, and the MAPbBr3 perovskite is designed and fabricated to simultaneous enhance the detection performance in the UV and visible light regions. The β-Ga2O3/Au/MAPbBr3 SSPD exhibits enhanced optoelectronic performance with high responsivities of 0.47 and 1.43 A W-1 at 240 and 520 nm under a bias of 6 voltage (V), respectively, which are 8.5 and 23 times than that of the metal-semiconductor-metal (MSM) structure MAPbBr3 PD at 6 V, respectively. The enhanced performance was attributed to the effective suppression of carrier recombination due to the efficient interface charge separation in the device structure. In addition, the self-powered response characteristic is also realized by forming a type-II heterojunction between β-Ga2O3 and MAPbBr3, which gives the β-Ga2O3/Au/MAPbBr3 SSPD superior single-pixel photo-imaging ability without an external power supply. This work provides a simple and effective method for the preparation of high-performance self-powered imaging PDs in the UV-visible region.

broad-spectra perovskite photodetector sandwich structure self-powered β-Ga2O3

SCI

English

Others

WOS:000873802700001

2-s2.0-85140341286

Scopus

1.Key Laboratory for Photonic and Electronic Bandgap Materials,Ministry of Education,School of Physics and Electronic Engineering,Harbin Normal University,Harbin,150025,China
2.School of Microelectronics,Southern University of Science and Technology,Shenzhen,518055,China
3.Suzhou Institute of Nano-Tech and Nano-Bionics,Chinese Academy of Sciences,Suzhou,215123,China

Gong，Weiqiang,Yan，Jun,Gao，Feng,et al. High-Performance UV-Vis Broad-Spectra Photodetector Based on a β-Ga2O3/Au/MAPbBr3Sandwich Structure[J]. ACS Applied Materials & Interfaces,2022.

Gong，Weiqiang,Yan，Jun,Gao，Feng,Ding，Sunan,He，Gaohang,&Li，Lin.(2022).High-Performance UV-Vis Broad-Spectra Photodetector Based on a β-Ga2O3/Au/MAPbBr3Sandwich Structure.ACS Applied Materials & Interfaces.

Gong，Weiqiang,et al."High-Performance UV-Vis Broad-Spectra Photodetector Based on a β-Ga2O3/Au/MAPbBr3Sandwich Structure".ACS Applied Materials & Interfaces (2022).