中文版 | English
Title

Distannylated Bithiophene Imide: Enabling High-Performance n-Type Polymer Semiconductors with an Acceptor-Acceptor Backbone

Author
Corresponding AuthorOrtiz, Rocio Ponce; Zhou, Ming; Guo, Xugang
Publication Years
2020-08-17
DOI
Source Title
ISSN
1433-7851
EISSN
1521-3773
Volume59Pages:14449-14457
Abstract
A distannylated electron-deficient bithiophene imide (BTI-Tin) monomer was synthesized and polymerized with imide-functionalized co-units to afford homopolymer PBTI and copolymer P(BTI-BTI2), both featuring an acceptor–acceptor backbone with high molecular weight. Both polymers exhibited excellent unipolar n-type character in transistors with electron mobility up to 2.60 cm2 V−1 s−1. When applied as acceptor materials in all-polymer solar cells, PBTI and P(BTI-BTI2) achieved high power-conversion efficiency (PCE) of 6.67 % and 8.61 %, respectively. The PCE (6.67 %) of polymer PBTI, synthesized from the distannylated monomer, is much higher than that (0.14 %) of the same polymer PBTI*, synthesized from typical dibrominated monomer. The 8.61 % PCE of copolymer P(BTI-BTI2) is also higher than those (<1 %) of homopolymers synthesized from dibrominated monomers. The results demonstrate the success of BTI-Tin for accessing n-type polymers with greatly improved device performance.
© 2020 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim
Indexed By
EI ; SCI ; IC
Language
English
Important Publications
NI Journal Papers
SUSTech Authorship
Corresponding
Funding Project
M.Z. thanks the Project of State Key Laboratory of Oil and Gas Reservoir Geology and Exploitation (PLN201807) and Key Projects of Application Foundation in Sichuan Province (19YYJC1537). Research at University of M&aacute;laga was supported by Junta de Andaluc&iacute;a (UMA18- FEDERJA-080). X.G. thanks the Shenzhen Science and Technology Innovation Commission (Nos. JCYJ20170817105905899 and JCYJ20180504165709042). Y.S. thanks the Innovative Research Foundation of Southwest Petroleum University (2019cxyb011). H.Y.W. is grateful for the financial support from the National Research Foundation (NRF) of Korea (NRF-2016M1A2A2940911 and 2019R1A6A1A11044070). This work is supported by Center for Computational Science and Engineering at SUSTech. The authors also thank the Materials Characterization and Preparation Center (MCPC) and the Pico Center of SUSTech for some characterizations in this work.M.Z. thanks the Project of State Key Laboratory of Oil and Gas Reservoir Geology and Exploitation (PLN201807) and Key Projects of Application Foundation in Sichuan Province (19YYJC1537). Research at University of M&aacute;laga was supported by Junta de Andaluc&iacute;a (UMA18&#8208; FEDERJA&#8208;080). X.G. thanks the Shenzhen Science and Technology Innovation Commission (Nos. JCYJ20170817105905899 and JCYJ20180504165709042). Y.S. thanks the Innovative Research Foundation of Southwest Petroleum University (2019cxyb011). H.Y.W. is grateful for the financial support from the National Research Foundation (NRF) of Korea (NRF&#8208;2016M1A2A2940911 and 2019R1A6A1A11044070). This work is supported by Center for Computational Science and Engineering at SUSTech. The authors also thank the Materials Characterization and Preparation Center (MCPC) and the Pico Center of SUSTech for some characterizations in this work.
WOS Accession No
WOS:000545686300001
Publisher
EI Accession Number
20202808922048
EI Keywords
Molecular weight ; Organic polymers ; Thin film circuits ; Thin film transistors ; Tin
ESI Classification Code
Tin and Alloys:546.2 ; Semiconductor Devices and Integrated Circuits:714.2 ; Chemical Products Generally:804 ; Organic Polymers:815.1.1 ; Atomic and Molecular Physics:931.3
ESI Research Field
CHEMISTRY
Data Source
EV Compendex
Citation statistics
Cited Times [WOS]:48
Document TypeJournal Article
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/411560
DepartmentDepartment of Materials Science and Engineering
Affiliation
1.School of New Energy and Materials and State Key Laboratory of Oil and Gas Reservoir Geology and Exploitation Engineering, Southwest Petroleum University, Chengdu; Sichuan; 610500, China
2.Department of Materials Science and Engineering, Southern University of Science and Technology (SUSTech), No. 1088, Xueyuan Road, Shenzhen; Guangdong; 518055, China
3.Department of Chemistry, College of Science, Korea University, 145 Anam-ro, Seoul; Seongbuk-gu; 136-713, Korea, Republic of
4.Department of Physical Chemistry, University of Málaga, Campus de Teatinos s/n, Málaga; 29071, Spain
First Author AffilicationDepartment of Materials Science and Engineering
Corresponding Author AffilicationDepartment of Materials Science and Engineering
Recommended Citation
GB/T 7714
Shi, Yongqiang,Guo, Han,Huang, Jiachen,et al. Distannylated Bithiophene Imide: Enabling High-Performance n-Type Polymer Semiconductors with an Acceptor-Acceptor Backbone[J]. ANGEWANDTE CHEMIE-INTERNATIONAL EDITION,2020,59:14449-14457.
APA
Shi, Yongqiang.,Guo, Han.,Huang, Jiachen.,Zhang, Xianhe.,Wu, Ziang.,...&Guo, Xugang.(2020).Distannylated Bithiophene Imide: Enabling High-Performance n-Type Polymer Semiconductors with an Acceptor–Acceptor Backbone.ANGEWANDTE CHEMIE-INTERNATIONAL EDITION,59,14449-14457.
MLA
Shi, Yongqiang,et al."Distannylated Bithiophene Imide: Enabling High-Performance n-Type Polymer Semiconductors with an Acceptor–Acceptor Backbone".ANGEWANDTE CHEMIE-INTERNATIONAL EDITION 59(2020):14449-14457.
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