南方科技大学知识苑(SUSTech KC): Ultra-low Specific Contact Resistivity (3.2×10<sup>-10</sup> Ω-cm<sup>2</sup>) of Ti/Si<inf>0.5</inf>Ge<inf>0.5</inf> Contact: Deep Insights into the Role of Interface Reaction and Ga Co-doping

Title	Ultra-low Specific Contact Resistivity (3.2×10^-10 Ω-cm²) of Ti/Si0.5Ge0.5 Contact: Deep Insights into the Role of Interface Reaction and Ga Co-doping
Author	Xu, Haiwen 1; Wang, Xinke 1; Luo, Sheng 1; Zhang, Jishen 1; Han, Kaizhen 1; Sun, Chen 1; Wang, Chengkuan 1; Khazaka, Rami 2; Xie, Qi 2; Huang, Yi3 ; Zhou, Yi 1; He, Jiaqing3 ; Liang, Gengchiau 1; Gong, Xiao 1
Corresponding Author	Gong, Xiao
Publication Years	2021
Conference Name	41st Symposium on VLSI Technology, VLSI Technology 2021
ISSN	0743-1562
ISBN	9784863487802
Source Title	Digest of Technical Papers - Symposium on VLSI Technology
Volume	2021-June
Conference Date	June 13, 2021 - June 19, 2021
Conference Place	Virtual, Online, Japan
Author of Source	IEEE Electron Devices Society; Japan Society of Applied Physics
Publisher	Institute of Electrical and Electronics Engineers Inc.
Abstract	We report an ultra-low specific contact resistivity (ρc) down to 3.2×10^-10 Ω-cm² on in-situ grown boron (B) and surface segregated gallium (Ga) co-doped p⁺-Si0.5Ge0.5 with a high average active doping concentration (NA) of 1.2×10²¹ cm^-3. Two batches of devices with 8 sets of data using ladder transmission line model (LTLM) were fabricated to confirm the accuracy. We also found, for the first time, that the co-doped Ga not only enhances NA but also plays a vital role in achieving thermally stable Ti/p⁺-Si0.5Ge0.5 contacts with the thermal budget of up to 450 ℃. A mechanism for the deep understanding of such phenomenon was proposed and experimentally verified. © 2021 JSAP
SUSTech Authorship	Others
Language	English
Indexed By	EI
Funding Project	The authors acknowledge support from MOE Tier 2 grant (MOE T2-1-137).
EI Accession Number	20220911735775
EI Keywords	Gallium ; Semiconductor doping ; Si-Ge alloys ; Silicon
ESI Classification Code	Nonferrous Metals and Alloys excluding Alkali and Alkaline Earth Metals:549.3 ; Semiconducting Materials:712.1
Data Source	EV Compendex
Document Type	Conference paper
Identifier	http://kc.sustech.edu.cn/handle/2SGJ60CL/411701
Department	Southern University of Science and Technology
Affiliation	1.Department of Electrical and Computer Engineering, National University of Singapore, 117576, Singapore 2.ASM, Belgium, Kapeldreef 75, Leuven; 3001, Belgium 3.Pico Center, Southern University of Science and Technology, Shenzhen, China
Recommended Citation GB/T 7714	Xu, Haiwen,Wang, Xinke,Luo, Sheng,et al. Ultra-low Specific Contact Resistivity (3.2×10^-10 Ω-cm²) of Ti/Si0.5Ge0.5 Contact: Deep Insights into the Role of Interface Reaction and Ga Co-doping[C]//IEEE Electron Devices Society; Japan Society of Applied Physics:Institute of Electrical and Electronics Engineers Inc.,2021.

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Ultra-low Specific Contact Resistivity (3.2&times;10-10 &#8486;-cm2) of Ti/Si0.5Ge0.5 Contact: Deep Insights into the Role of Interface Reaction and Ga Co-doping

Ultra-low Specific Contact Resistivity (3.2×10^-10 Ω-cm²) of Ti/Si0.5Ge0.5 Contact: Deep Insights into the Role of Interface Reaction and Ga Co-doping