Selective Laser Lift-off of GaN Micro-LED from a Sapphire Substrate Using 266-nm Solid-state Laser
In this paper, we realize the process of 88μm micro-LED arrays laser lift-off to remove the sapphire substrate and get integrated GaN epitaxial films by 266nm SPSS solid-state laser. Several blue light flip-chip micro-LED arrays with a resolution of 1280x720 are designed and fabricated based on the known silicon-substrate-based drive circuit panel. The LED side is welded to the silicon substrate by metallic bonding process. Epoxy resin structured adhesive is filled between the interface between the silicon carrier and Micro-LED array to supply a strong mechanical support and an avoidance of de-bonding. .
Cited Times [WOS]:0
|Document Type||Conference paper|
|Department||Southern University of Science and Technology|
Southern University of Science and Technology,Shenzhen,China
|First Author Affilication||Southern University of Science and Technology|
|First Author's First Affilication||Southern University of Science and Technology|
Yuan，Junchao,Chen，Fuhao. Selective Laser Lift-off of GaN Micro-LED from a Sapphire Substrate Using 266-nm Solid-state Laser[C],2022:790-792.
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