中文版 | English
Title

Selective Laser Lift-off of GaN Micro-LED from a Sapphire Substrate Using 266-nm Solid-state Laser

Author
DOI
Publication Years
2022
ISSN
0097-966X
EISSN
2168-0159
Source Title
Volume
53
Issue
S1
Pages
790-792
Abstract
In this paper, we realize the process of 88μm micro-LED arrays laser lift-off to remove the sapphire substrate and get integrated GaN epitaxial films by 266nm SPSS solid-state laser. Several blue light flip-chip micro-LED arrays with a resolution of 1280x720 are designed and fabricated based on the known silicon-substrate-based drive circuit panel. The LED side is welded to the silicon substrate by metallic bonding process. Epoxy resin structured adhesive is filled between the interface between the silicon carrier and Micro-LED array to supply a strong mechanical support and an avoidance of de-bonding. .
Keywords
SUSTech Authorship
First
Language
English
URL[Source Record]
Scopus EID
2-s2.0-85141899343
Data Source
Scopus
Citation statistics
Cited Times [WOS]:0
Document TypeConference paper
Identifierhttp://kc.sustech.edu.cn/handle/2SGJ60CL/411853
DepartmentSouthern University of Science and Technology
Affiliation
Southern University of Science and Technology,Shenzhen,China
First Author AffilicationSouthern University of Science and Technology
First Author's First AffilicationSouthern University of Science and Technology
Recommended Citation
GB/T 7714
Yuan,Junchao,Chen,Fuhao. Selective Laser Lift-off of GaN Micro-LED from a Sapphire Substrate Using 266-nm Solid-state Laser[C],2022:790-792.
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